An on-chip integrated microfiber–silicon–graphene hybrid structure photodetector

Abstract

Silicon photonic devices have great potential for photocommunication, and silicon-based photodetectors have attracted wide attention. Here, we report an on-chip integrated microfiber–silicon–graphene hybrid structure photodetector that can operate in the visible and near-infrared ranges. The detector has a responsivity of ∼136 mA W−1 at 808 nm and a rise time of ∼1.1 μs. At a reverse bias of 5 V, we achieved a responsivity of ∼1350 mA W−1. Our device provides an option for on-chip integration.

Tunable mid-infrared photodetector based on graphene plasmons controlled by ferroelectric polarization for micro-spectrometer

“…Graphene is a promising material for photodetection owing to its outstanding optical and electrical properties [1][2][3][4], such as strong light-matter interaction, electrostatic tunability, and ultra-high carrier mobility. In particular, the graphene-based photodetectors have enormous potential for mid-infrared (MIR) band detection applications, including imaging [5], spectroscopy [6], optical communication [7], and biosensing [8] due to their broad response spectra. Compared to MIR photodetectors using traditional semiconductor materials such as HgCdTe and InSb, graphene-based MIR photodetectors feature a tunable spectral response and can operate at room temperature [9].…”