An on‐chip two‐state single‐turn spiral inductor for reconfigurable RF circuit designs

Abstract

A two‐state single turn spiral inductor design is simulated in a 130 nm technology and another design is simulated and measured in a 45 nm technology. Measurements show an 80% inductance increase at 20 GHz in the 45 nm technology and a simulated 76% increase at 24 GHz in the 130 nm technology. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 673–677, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24985