An Online Failure Assessment Approach for SiC-based MOSFET Power Modules Using Iterative Condition Monitoring Technique

Naghibi, Javad; Mehran, Kamyar; Foster, M. P.

doi:10.1109/compel49091.2020.9265830

Cited by 5 publications

(3 citation statements)

References 19 publications

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“…They are commonly used in traction systems [1,2], pulsed power supplies [3][4][5], HVDC circuit breakers [6][7][8], and solid-state transformers [9,10]. IGBTs and capacitors are the components with 34% failure rates in the power converters [11][12][13]. Short Circuit Faults (SCFs) are specially important as a frequent failure modes in the IGBT operation.…”

Section: Introductionmentioning

confidence: 99%

Reliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique

2021

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Like the widely-used semiconductor switch, Insulated Gate Bipolar Transistors (IGBTs) are subject to many failures and degradation in power electronic converters. In Short Circuit Fault (SCF), as the most reported failures in IGBTs, drastic, sudden temperature rise, and peak SCF current are widespread failures owing to a relatively long delay of the protection subsystem. This paper proposes a protection strategy to limit the junction temperature rise by limiting the SCF current by adding a small value resistor in the IGBT emitter. Second, it reduces the SCF current to a value much less than the saturated current. With the proposed control approach, sudden temperature rise during SCF is controlled, preventing significant failure in IGBTs. The extension of the permissible SCF time is achieved even for the cases with temporary arcs. A simple control loop activates in the SCF condition and does not create slow transients for the IGBT. The results of this paper are validated through simulation and experiment.

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Section: Introductionmentioning

confidence: 99%

Reliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique

2021

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“…Wide Bandgap (WBG)-based power module, as an emerging semiconductor technology, can address most of the performance requirements in the high frequency high density power electronic applications [1][2][3]. Higher temperature operation, higher voltage and current ratings, and lower conduction power loss make Silicon Carbide (SiC) and Gallium Nitride (GaN)-based devices strong candidates for high density power electronic applications [4,5].…”

Section: Introductionmentioning

confidence: 99%

“…(1) Measurement of the electrical-based fatigue precursors is sensitive to temperature and also requires special implementation techniques [2,3]. This limitation becomes more apparent in high frequency circuit designs considering the nominal higher switching frequency in WBG devices.…”

Section: Introductionmentioning

confidence: 99%

High-Frequency Non-Invasive Magnetic Field-Based Condition Monitoring of SiC Power MOSFET Modules

2021

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Current distribution anomaly can be used to indicate the onset of package-related failures modes in Silicon Carbide power MOSFET modules. In this paper, we propose to obtain the wire bond’s magnetic field profile using an array of Tunnel Magneto-Resistance (TMR) sensors, and characterise the small changes in the current density distribution to find the onset of the wire bond degradation processes, including wire bond lift-off, wire bond cracking, and wire bond fracture. We propose a novel condition monitoring technique where a non-galvanic high-bandwidth sensing and a reliability model monitor the health of the power switches. We designed a dedicated calibration set-up to examine the sensor array and calibrated to demonstrate the adequate sensitivity to a minimum 5% current anomaly detection in a single wire bond of the switching devices operating with 50 kHz switching frequency. We use a hardware-in-the-loop (HIL) experimental set-up to replicate wire bond-related failures in a 1200V/55A SiC MOSFET power module of a DC/DC Boost converter. Signal conditioning circuits are further designed to amplify and buffer the sensor readings. Experimental results showed the proposed technique is able to detect a wide range of package-related failures.

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Active Thermal Control of Dual Three-Phase Permanent Magnet Synchronous Motor Based on Improved Bayerer's Lifetime Model

Yang,

Wang,

Zhang

et al. 2024

2024 IEEE 7th International Electrical and Energy Conference (CIEEC)

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An Online Failure Assessment Approach for SiC-based MOSFET Power Modules Using Iterative Condition Monitoring Technique

Cited by 5 publications

References 19 publications

Reliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique

Reliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique

High-Frequency Non-Invasive Magnetic Field-Based Condition Monitoring of SiC Power MOSFET Modules

Active Thermal Control of Dual Three-Phase Permanent Magnet Synchronous Motor Based on Improved Bayerer's Lifetime Model

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