An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters

Sun, Peng; Guo, Yiting; Wu, Tao; Zhao, Zhibin; Lai, Pengyu; Chen, Zhong; Qi, Lei; Cui, Xiang

doi:10.1109/jestpe.2021.3117734

Cited by 16 publications

(2 citation statements)

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“…An overview of TSEPs' sensitivity and applicability is given in [6]- [8]. Most of the TSEPs known for Si semiconductors have also been applied to SiC devices [9]- [19]. Transfer possibilities for GaN are currently being researched [17], [20]- [23].…”

Section: Introductionmentioning

confidence: 99%

“…A calibration Another group of TSEPs is based on changes in the dynamic switching characteristic, which also depends on the temperature and the value of the internal gate resistance. The turn-on respectively turn-off delay as TSEP has been investigated in [16]- [19], [39]- [41]. The threshold voltage can also be applied as reported in [14], [29], [42]- [44].…”

Section: Introductionmentioning

confidence: 99%

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Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors

Gleissner

Nehmer

Bakran

2023

IEEE Open J. Power Electron.

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This paper presents research results on the junction temperature measurement via the internal gate resistance in converter operation for IGBTs and its applicability to other types of active power semiconductors. A junction temperature monitor has been developed to determine the value of the temperature-dependent internal gate resistance by using a sinusoidal voltage superimposed on the gate voltage at the resonance frequency. The device enables a simple and robust junction temperature measurement in inverter operation, which is in excellent agreement with an infrared reference measurement. The method's applicability to semiconductors other than Si-IGBTs, such as SiC-MOSFETs, JFETs, and GaN devices, is verified by gate impedance measurements using a network analyzer. The gate impedance's quality factor is decisive. Other temperature-sensitive electrical parameters (TSEPs) related to the switching behavior depend on the internal gate resistance. Therefore, the findings presented are relevant for many junction temperature measurement methods.INDEX TERMS Junction temperature, semiconductor device measurements, silicon carbide devices, temperature measurement, temperature-sensitive electrical parameters, wide-band-gap devices.

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