2016
DOI: 10.1109/lpt.2016.2572299
|View full text |Cite
|
Sign up to set email alerts
|

An Optical Content Addressable Memory Cell for Address Look-Up at 10 Gb/s

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

1
11
0

Year Published

2017
2017
2020
2020

Publication Types

Select...
6

Relationship

3
3

Authors

Journals

citations
Cited by 17 publications
(12 citation statements)
references
References 18 publications
1
11
0
Order By: Relevance
“…Within this frame, our most recent research efforts have been aligned towards overcoming the frequency barrier set by electronic memories by realizing CAM-and RAM-based configurations completely in the optical domain [25][26][27][54][55][56][57][58][59]. The first all-optical B-CAM cell demonstrations was recently reported based on a monolithically integrated SOA-MZI-based FF with speed capabilities of up to 10 Gb s −1 [56] achieving a large leap in the speed of memory content addressing operations; it was later followed by a series of significant achievements [54][55][56][57][58][59] also advancing the scalability [57] and architectural complexity by introducing all-optical T-CAM cell configurations [55] and realizing optical CAM ML [59] architectures. While optical CAM cells have reached 10 Gb s −1 operation, optical RAM cells have been limited to speeds less than 5 GHz [56].…”
Section: Architecture Of An Optical Al Tablementioning
confidence: 99%
See 2 more Smart Citations
“…Within this frame, our most recent research efforts have been aligned towards overcoming the frequency barrier set by electronic memories by realizing CAM-and RAM-based configurations completely in the optical domain [25][26][27][54][55][56][57][58][59]. The first all-optical B-CAM cell demonstrations was recently reported based on a monolithically integrated SOA-MZI-based FF with speed capabilities of up to 10 Gb s −1 [56] achieving a large leap in the speed of memory content addressing operations; it was later followed by a series of significant achievements [54][55][56][57][58][59] also advancing the scalability [57] and architectural complexity by introducing all-optical T-CAM cell configurations [55] and realizing optical CAM ML [59] architectures. While optical CAM cells have reached 10 Gb s −1 operation, optical RAM cells have been limited to speeds less than 5 GHz [56].…”
Section: Architecture Of An Optical Al Tablementioning
confidence: 99%
“…The first all-optical B-CAM cell demonstrations was recently reported based on a monolithically integrated SOA-MZI-based FF with speed capabilities of up to 10 Gb s −1 [56] achieving a large leap in the speed of memory content addressing operations; it was later followed by a series of significant achievements [54][55][56][57][58][59] also advancing the scalability [57] and architectural complexity by introducing all-optical T-CAM cell configurations [55] and realizing optical CAM ML [59] architectures. While optical CAM cells have reached 10 Gb s −1 operation, optical RAM cells have been limited to speeds less than 5 GHz [56]. Drawing from this separate operational speeds demonstrated for RAM cells and CAM cells so far, we are here developing a novel RAM cell architecture that exceeds for the first time the 5 GHz barrier of electronics, achieving an operation of 10 Gb s −1 , which combined with our most recent work on 10 Gb s −1 multi-bit optical CAM MLs [59], now holds for the first time the verified credentials for 10 Gb s −1 AL functionalities directly in the optical domain.…”
Section: Architecture Of An Optical Al Tablementioning
confidence: 99%
See 1 more Smart Citation
“…In this regime, some preliminary first steps, stemming from our group, have managed to develop the first photonic alternative CAM-based elements [50,51], which is the main focus of this paper. More specifically, in Section 2, we initially discuss the architectures and main functional building blocks of electronic AL memories, followed by the development of monolithic photonic integration for optical FFs and RAM memories on a monolithic InP platform [33,39] in Section 3.…”
Section: Introductionmentioning
confidence: 99%
“…More specifically, in Section 2, we initially discuss the architectures and main functional building blocks of electronic AL memories, followed by the development of monolithic photonic integration for optical FFs and RAM memories on a monolithic InP platform [33,39] in Section 3. In Section 4, we present the first experimental proof-of-principle of an all-optical Binary CAM (B-CAM) cell architecture at 10 Gb/s [50]. This architecture is later extended in a more advanced all-optical (T-CAM configuration in Section 4, directly supporting, for the first time, a wildcard bit operation of a logical "X" value in the optical domain [51].…”
Section: Introductionmentioning
confidence: 99%