2007
DOI: 10.1063/1.2723177
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An optical horn structure for single-photon source using quantum dots at telecommunication wavelength

Abstract: We succeeded in efficiently generating single-photon pulses from an InAs/InP quantum dot at a wavelength of 1.5 μm. Our optical structure, named a single photon horn, can propagate over 95% photon pulses in InP substrate. We extracted the photon pulses through an anti-reflection coating on a substrate, and then we injected them into an objective lens. Total extraction efficiency from the quantum dot to the lens reached ∼11%, which was estimated using a photon correlation measurement. Furthermore we directly ob… Show more

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Cited by 101 publications
(104 citation statements)
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“…We couple multiple InAs/InP quantum dots that serve as efficient single photon sources 22,29,30 to independent photonic crystal cavities fabricated in close proximity on the same chip. In order to match the cavity resonances and compensate for fabrication errors, we utilize combination of nitrogen gas deposition and local thermal evaporation.…”
mentioning
confidence: 99%
“…We couple multiple InAs/InP quantum dots that serve as efficient single photon sources 22,29,30 to independent photonic crystal cavities fabricated in close proximity on the same chip. In order to match the cavity resonances and compensate for fabrication errors, we utilize combination of nitrogen gas deposition and local thermal evaporation.…”
mentioning
confidence: 99%
“…Semiconductor quantum dots are a promising platform for single [13][14][15][16][17][18] and entangled photon emitters 19,20 , owing to fundamentally sub-Poissonian emission statistics and common features with standard optoelectronics such as electrical control and pumping. So far, most progress has been made at shorter wavelengths around 900 nm, unsuitable for transmission over long distances in fibre.…”
mentioning
confidence: 99%
“…We use a hybrid approach that combines silicon photonic waveguides with InAs/InP quantum dots that act as efficient sources of single photons at telecom wavelength. [25][26][27] A pickand-place technique allows transferring of tapered InP nanobeams containing InAs quantum dots onto a silicon waveguide with nanometer-scale precision. The tapered nanobeams efficiently couple the emission from the quantum dot to the silicon waveguide.…”
mentioning
confidence: 99%