An optical model of a transmission-type vertical-cavity electro-absorption modulator on Si/SiO<inf>2</inf> for high-speed intra/inter-chip interconnects

Abstract

An optical model of a transmission-type vertical-cavity electro-absorption modulator (EA) on Si/SiO 2 for highspeed intra/inter-chip interconnects is developed and analysed by the method of single expression (MSE). As an external radiation source a wideband light source is suggested for avoiding the problem of usage of Si emitter. Transmission properties of symmetrical structure of a modulator consisting of Si p-n junction embedded between Si/SiO 2 DBRs are analysed versus the values of imaginary part of p-n junction permittivity. Corresponding distributions of electric field amplitude and power flow density along the structure and surrounding half-spaces are presented for high and low transmission state. The transparency of the structure permits to have a cascade of modulators which can be installed in special trunks on chips for connection between different layers of an integrated circuit.

Numerical analysis of impact of DBRs' outermost layers on optical characteristics of a surface-normal electro-absorption modulator by the method of single expression

“…The MSE as a simulation tool has been actively used in numerical analysis of different 1D multilayer and modulated structures [12][13][14] and has been recently applied for numerical analysis of an optical model of transmission-type vertical-cavity electro-absorption modulator on Si/SiO 2 [15]. Numerical results of correct wavelength-scale computer simulation of optical characteristics of a surface-normal EA modulator with DBR mirrors and MQW absorbing region are described below along with the conclusion.…”