An organic thin-film transistor of high mobility by dielectric surface modification with organic molecule

Kim, Jong Moo; Lee, Joo Won; Kim, Jai Kyeong; Ju, Byeong Kwon; Kim, Jong Seung; Lee, Yun Hi; Oh, Myung Hwan

doi:10.1063/1.1841470

Cited by 68 publications

(42 citation statements)

References 18 publications

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“…The use of SAMs comprising different functional groups and chemical bonding schemes to gate oxides is a common technique, including silane or phosphonate derivatives. [178][179][180][181] It should be kept in mind that any surface modification will most likely result in a different organic semiconductor film quality (in terms of crystallinity and density of defects, see below), thus leading to variations of device performance.…”

Section: Wwwchemphyschemorgmentioning

confidence: 99%

Organic Electronic Devices and Their Functional Interfaces

2007

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A most appealing feature of the development of (opto)electronic devices based on conjugated organic materials is the highly visible link between fundamental research and technological advances. Improved understanding of organic material properties can often instantly be implemented in novel device architectures, which results in rapid progress in the performance and functionality of devices. An essential ingredient for this success is the strong interdisciplinary nature of the field of organic electronics, which brings together experts in chemistry, physics, and engineering, thus softening or even removing traditional boundaries between the disciplines. Naturally, a thorough comprehension of all properties of organic insulators, semiconductors, and conductors is the goal of current efforts. Furthermore, interfaces between dissimilar materials-organic/organic and organic/inorganic-are inherent in organic electronic devices. It has been recognized that these interfaces are a key for device function and efficiency, and detailed investigations of interface physics and chemistry are at the focus of research. Ultimately, a comprehensive understanding of phenomena at interfaces with organic materials will improve the rational design of highly functional organic electronic devices.

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Section: Wwwchemphyschemorgmentioning

confidence: 99%

Organic Electronic Devices and Their Functional Interfaces

2007

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“…We follow ref. [31] and calculate the light quark part of the correlation function in the coordinate-space, which is then Fourier transformed to the momentum space in D dimensions. The resulting light-quark part is combined with the charm-quark part before it is dimensionally regularized at D = 4.…”

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confidence: 99%

QCD sum rule study of a charged bottom-strange scalar meson

2016

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Using the QCD sum rule approach we investigate the possible four-quark structure for the new observed B 0 s π ± narrow structure (D0). We use a diquak-antidiquark scalar current and work to the order of ms in full QCD, without relying on 1/mQ expansion. Our study indicates that although it is possible to obtain a stable mass in agreement with the state found by the D0 collaboration, a more constraint analysis (simultaneous requirement of the OPE convergence and the dominance of the pole on the phenomenological side) leads to a higher mass. We also predict the masses of the bottom scalar tetraquark resonances with zero and two strange quarks.PACS numbers: 11.55. Hx, 12.38.Lg , Recently the D0 Collaboration reported the observation of a narrow structure, called X(5568), in the de-. This is the first observation of a hadronic state with two quarks and two antiquarks of four different flavors and, therefore, can only be explained as a tetraquark or molecular state. The mass and width of the observed state were reported to be: m = 5567.8 ± 2.9(sta) +0.9 −1.9 (syst) MeV/c 2 and Γ = 21.9 ± 6.4(sta)2 . As pointed out in Ref.[1], considering the large mass difference between the mass of the X(5568) and the sum of the B 0 and K ± masses, it can be difficult to explain the X(5568) as a molecular state. Therefore, the X (5568) [19][20][21][22] or a mixture between two-meson and four-quark states [23]. In this paper we use the QCD sum rule (QCDSR) approach [24][25][26][27][28] to investigate the possible four-quark structure for the X(5568) and, therefore, to test if the X(5568) could be the isovector bottom partner of the D + s0 (2317). The QCDSR for scalar mesons are constructed from the two-point correlation function written in terms of a scalar current j S :The key idea of the QCDSR method is to consider that this correlation function is of dual nature and it depends on the value of the momentum q. For large momentum, i.e., short distances, the correlation function can be calculated using perturbative QCD. In this case, the current j S is written in terms of the quark content of the studied mesons. However, since we are interested in studying the properties of hadrons, the relevant energies are lower and contributions from quark condensates, gluon condensates, etc., need to be included in the evaluation of Eq. (1). This can be done by using the Wilson operator product expansion (OPE) of the correlation function. In this case, Eq. (1) is expanded in terms of local condensates and a series of coefficients. The local operators incorporate nonperturbative long-distance effects, while the coefficients, by construction, include only the shortdistance domain and can be determined perturbatively. This way of evaluating the correlation function is customarily named as the calculation on the "OPE side".At large distances, or, equivalently, small momentum, the currents j † S and j S of Eq. (1) can be interpreted as operators of creation and annihilation of the scalar mesons. In this case, the correlation function is obtained by ins...

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“…Halik et al [1] demonstrated that large operating voltages were not an intrinsic feature of organic transistors, and the operating voltages and power dissipations of organic devices could be dramatically reduced by using extreme thin self-assembly film of silane-based molecular as dielectric. Apart from reducing the thickness of gate dielectric, many other methods [3][4][5][6][7][8][9][10][11][12][13][14] have been proposed to lower down the operating voltages and threshold voltages (V T ). The most attractive one among them is considered to be applying high-k material [2][3][4][5][6][7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…Apart from reducing the thickness of gate dielectric, many other methods [3][4][5][6][7][8][9][10][11][12][13][14] have been proposed to lower down the operating voltages and threshold voltages (V T ). The most attractive one among them is considered to be applying high-k material [2][3][4][5][6][7][8][9][10][11][12][13][14]. Until now, the reported high-k materials used in OFETs include HfO 2 [3], Al 2 O 3 [4], Barium Zirconate Titanate (BZT) [5], BZN (Bi 1.5 Zn 1.0 Nb 1.5 O 7 ) [6], SBT (SrBi 2 Ta 2 O 9 ) [7], Ta 2 O 5 [8], TiO 2 [9], and ZrO 2 [10,11].…”

Section: Introductionmentioning

confidence: 99%

Low voltage organic devices and circuits with aluminum oxide thin film dielectric layer

Shang

Chen

et al. 2010

Sci. China Technol. Sci.

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Low voltage operating organic devices and circuits have been realized using atomic layer deposition deposited aluminum oxide thin film as dielectric layer. The dielectric film has per unit area capacitance of 165 nF/cm 2 and leakage current of 1 nA/cm 2 at 1 MV/cm. The devices and circuits use the small-molecule hydrocarbon pentacene as the active semiconductor material. Transistors, inverters, and ring oscillators with operating voltage lower than 5 V were obtained. The mobility of organic field-effect transistors was extracted to be 0.16 cm 2 /Vs in saturation range, the threshold voltage is 0.3 V, and the on/off current ratio is larger than 10 5 . The gain of inverters is estimated to be 12 at −5 V supply voltage, and the propagation delay is 0.25 ms per stage in 5-stage ring oscillators. OFET, low voltage, atomic layer deposition, Al 2 O 3 thin film, high-k dielectric Citation: Shang L W, Ji Z Y, Chen Y P, et al. Low voltage organic devices and circuits with aluminum oxide thin film dielectric layer. Sci China Tech Sci, 2011, 54: 95−98,

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An organic thin-film transistor of high mobility by dielectric surface modification with organic molecule

Cited by 68 publications

References 18 publications

Organic Electronic Devices and Their Functional Interfaces

Organic Electronic Devices and Their Functional Interfaces

QCD sum rule study of a charged bottom-strange scalar meson

Low voltage organic devices and circuits with aluminum oxide thin film dielectric layer

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