An over 220-GHz-Bandwidth Distributed Active Power Combiner in 250-nm InP DHBT

Jyo, Teruo; Nagatani, Munehiko; Ida, M.; Misawa, Miwa; Wakita, Hitoshi; Terao, Naoki; Nosaka, Hideyuki

doi:10.1109/bcicts48439.2020.9392961

Cited by 3 publications

(4 citation statements)

References 16 publications

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“…Toward future multi-Tbit/s/ch systems with a symbol rate of over 200 GBaud, we proposed and investigated bandwidth-extension techniques [7][8][9][10], as illustrated in the conceptual block diagrams (Fig. 6).…”

Section: -Ghz-bandwidth Amplifier Mixer and Combiner Icsmentioning

confidence: 99%

“…9(a). It consists of two parallel distributed amplifiers and a subsequent distributed resistive combiner [10]. This architecture helps in achieving both broadband characteristics and good isolation between two input ports.…”

Section: -Ghz-bandwidth Amplifier Mixer and Combiner Icsmentioning

confidence: 99%

“…This article reviews our latest extreme-broadband analog ICs, e.g., 110-GHz-bandwidth AMUX/ADE-MUX ICs [5,6] and 200-GHz-bandwidth amplifier, mixer, and combiner ICs [7][8][9][10], based on our inhouse 250-nm indium phosphide (InP) heterojunction bipolar transistor (HBT) technology [11] that enable further bandwidth extension.…”

Section: Introduction: Challenges Toward Multi-tbit/s/ch Optical Comm...mentioning

confidence: 99%

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Extreme-broadband Analog ICs Based on InP HBT Technology toward Multi-Tbit/s Optical Communications

Nagatani¹,

Jyo²,

Wakita³

et al. 2022

NTT Technical Review

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To cope with the rapid growth of communications traffic, transmission capacity per channel (wavelength) in optical core networks is required to reach the multi-Tbit/s level in the next decade. In this article, we review our latest extreme-broadband analog integrated circuits (ICs), e.g., 110-GHzbandwidth analog multiplexer/analog de-multiplexer ICs and 200-GHz-bandwidth amplifier, mixer, and combiner ICs, based on our in-house indium phosphide (InP) heterojunction bipolar transistor (HBT) technology that can break through the bandwidth bottlenecks in optical transceivers and be key enablers toward future multi-Tbit/s/ch optical communications systems.

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Section: -Ghz-bandwidth Amplifier Mixer and Combiner Icsmentioning

confidence: 99%

Section: -Ghz-bandwidth Amplifier Mixer and Combiner Icsmentioning

confidence: 99%

Section: Introduction: Challenges Toward Multi-tbit/s/ch Optical Comm...mentioning

confidence: 99%

See 1 more Smart Citation

Extreme-broadband Analog ICs Based on InP HBT Technology toward Multi-Tbit/s Optical Communications

Nagatani¹,

Jyo²,

Wakita³

et al. 2022

NTT Technical Review

Self Cite

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show abstract

“…Another application of distributed amplifiers is frequency interleaving. In that case, distributed amplifiers are used for signal combining and frequency conversion [5]− [6]. Distributed amplifiers are, thus, an essential component in the development of future communication technologies.…”

Section: Introductionmentioning

confidence: 99%

A Compact Fully-Differential Distributed Amplifier with Coupled Inductors in 0.18-µm CMOS Technology

Kawahara

UMEDA

TAKANO

et al. 2023

IEICE Trans. Electron.

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This paper presents a compact fully-differential distributed amplifier using a coupled inductor. Differential distributed amplifiers are widely required in optical communication systems. Most of the distributed amplifiers reported in the past are single-ended or pseudo-differential topologies. In addition, the differential distributed amplifiers require many inductors, which increases the silicon cost. In this study, we use differentially coupled inductors to reduce the chip area to less than half and eliminate the difficulties in layout design. The challenge in using coupled inductors is the capacitive parasitic coupling that degrades the flatness of frequency response. To address this challenge, the odd-mode image parameters of a differential artificial transmission line are derived using a simple loss-less model. Based on the analytical results, we optimize the dimensions of the inductor with the gradient descent algorithm to achieve accurate impedance matching and phase matching. The amplifier was fabricated in 0.18-μm CMOS technology. The core area of the amplifier is 0.27 mm 2 , which is 57% smaller than the previous work. Besides, we demonstrated a small group delay variation of ±2.7 ps thanks to the optimization. the amplifier successfully performed 30-Gbps NRZ and PAM4 transmissions with superior jitter performance. The proposed technique will promote the highdensity integration of differential traveling wave devices.

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A DC-to-150-GHz InP-DHBT Active Combiner Module for Ultra-Broadband Signal Generation

Jyo,

Nagatani,

Mutoh

et al. 2023

2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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An over 220-GHz-Bandwidth Distributed Active Power Combiner in 250-nm InP DHBT

Cited by 3 publications

References 16 publications

Extreme-broadband Analog ICs Based on InP HBT Technology toward Multi-Tbit/s Optical Communications

Extreme-broadband Analog ICs Based on InP HBT Technology toward Multi-Tbit/s Optical Communications

A Compact Fully-Differential Distributed Amplifier with Coupled Inductors in 0.18-µm CMOS Technology

A DC-to-150-GHz InP-DHBT Active Combiner Module for Ultra-Broadband Signal Generation

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