An overview of high-temperature electronic device technologies and potential applications

Dreike, P. L.; Fleetwood, D.M.; King, Donald B.; Sprauer, D. C.; Zipperian, T. E.

doi:10.1109/95.335047

Cited by 152 publications

(76 citation statements)

References 42 publications

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“…1,2) With the miniaturization and increasing power of power electronics, high temperature operation has become a serious issue. As a response to the growing demand of high temperature operation, next generation power semiconductors such as SiC and GaN, and packaging materials such as AlN and Si 3 N 4 have been developed for application at temperatures in excess of 573 K. [3][4][5] The development of a high temperature solder that can function at an ambient temperature above 573 K is expected to enable significant improvements in power electronics.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Zn-Al-Cu Alloys for High Temperature Solder Application

Kim

et al. 2008

Mater. Trans.

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Melting range, microstructure, mechanical properties and spreadabililty of Zn-(4$6 mass%)Al-(1$6 mass%)Cu alloys were investigated. Liquidus temperature was targeted between 655 and 675 K, and solidus temperature was targeted to 645 K. The liquidus temperature of the Zn-Al-Cu solders increased with Cu contents, but it decreased with Al contents. Microstructures of the Zn-Al-Cu solders consisted of primary "-phase (CuZn 4 ), -phase (Zn matrix), -eutectic phase (Zn-Al eutectic) and "-eutectic phase (Zn-Cu eutectic), irrespective of the Al and Cu contents. Increasing the Al and Cu contents, hardness and tensile strength increased, but elongation decreased. The Al content played an important role in improving the spread ratio, the Cu content had no significant influence on the spread ratio.

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Section: Introductionmentioning

confidence: 99%

Characteristics of Zn-Al-Cu Alloys for High Temperature Solder Application

Kim

et al. 2008

Mater. Trans.

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“…24 Interest in the material properties of ZnO was ignited later than that associated with GaN, primarily on account of material quality considerations, i.e., high-quality GaN was prepared earlier, and a lack of familiarity with means of effectively handling II-VI compound semiconductors, many GaN processing techniques being borrowed directly from the GaAs case. 25 While every effort was made to provide a reasonable sampling of the electron transport literature corresponding to each material, some key references may have been neglected. We apologize to authors for these potential oversights.…”

Section: Electron Transport Within Gan: a Reviewmentioning

confidence: 99%

“…Initial interest in the wide energy gap semiconductors focused on their considerable potential for high-frequency, high-power, high-temperature, and high-radiation device applications, where traditional semiconductors, such as Si and GaAs, prove inadequate [23][24][25][26][27][28][29][30]. The potential of wide energy gap semiconductors for use in optical devices, such as lasers and light-emitting diodes, operating in the blue-toultraviolet region of the electromagnetic spectrum, a region not traditionally served by optoelectronic devices, has further fueled interest in these materials [31][32][33][34][35][36][37][38].…”

Section: Introductionmentioning

confidence: 99%

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Siddiqua

Hadi

Shur

et al. 2015

J Mater Sci: Mater Electron

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Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. In an effort to provide some perspective on this rapidly evolving and burgeoning field of research, we review analyzes of the electron transport within some wide energy gap semiconductors of current interest in this paper. In order to narrow the scope of this review, we will primarily focus on the electron transport that occurs within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide in this review, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor in of itself, is included as it is often alloyed with other wide energy gap semiconductors, the resultant alloys being wide energy gap semiconductors themselves. The electron transport that occurs within zinc-blende gallium arsenide is also considered, albeit primarily for bench-marking purposes. Most of our discussion will focus on results obtained from our ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials, our results conforming with state-of-the-art wide energy gap semiconductor orthodoxy. A brief tutorial on the Monte Carlo electron transport simulation approach, this approach being used to generate the results presented herein, is also provided. Steady-state and transient electron transport results are presented. The evolution of the field, and a survey of the current literature, are also featured. We conclude our review by presenting some recent developments on the electron transport within these materials.

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“…The most fundamental limitation to the use of any semiconductor at elevated temperatures is the increasing density of intrinsic carriers, which is shown in Figure 5 [8].…”

Section: Semiconductorsmentioning

confidence: 99%

“…7 I-V curves of SiC MOSFET 35 A. 8 On-resistance of SiC MOSFET 35 A. 9 Transfer characteristics of SiC MOSFET 35 A.…”

mentioning

confidence: 99%