An Overview of Lifetime Management of Power Electronic Converters

Rahimpour, Saeed; Tarzamni, Hadi; Kurdkandi, Naser Vosoughi; Husev, Oleksandr; Vinnikov, Dmitri; Tahami, Farzad

doi:10.1109/access.2022.3214320

Cited by 44 publications

(18 citation statements)

References 124 publications

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“…IGBTs are commonly used in motor drives, converters circuits, and power supplies applications where there is a demand for high voltage and currents. Power MOSFETs, on the other hand, are increasingly used by the power supply community and in low-power inverters due to their high switching ability and ease of drive circuitry in contrast to IGBTs [3]. Si-based MOSFETs have long been hindered due to their high on-state resistance, which substantially increases power losses in the devices.…”

Section: Introductionmentioning

confidence: 99%

Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends

Chaudhary,

Denaï,

Refaat

et al. 2023

Energies

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Silicon (Si)-based semiconductor devices have long dominated the power electronics industry and are used in almost every application involving power conversion. Examples of these include metal-oxide-semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistors (IGBTs), gate turn-off (GTO), thyristors, and bipolar junction transistor (BJTs). However, for many applications, power device requirements such as higher blocking voltage capability, higher switching frequencies, lower switching losses, higher temperature withstand, higher power density in power converters, and enhanced efficiency and reliability have reached a stage where the present Si-based power devices cannot cope with the growing demand and would usually require large, costly cooling systems and output filters to meet the requirements of the application. Wide bandgap (WBG) power semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond (Dia) have recently emerged in the commercial market, with superior material properties that promise substantial performance improvements and are expected to gradually replace the traditional Si-based devices in various power electronics applications. WBG power devices can significantly improve the efficiency of power electronic converters by reducing losses and making power conversion devices smaller in size and weight. The aim of this paper is to highlight the technical and market potential of WBG semiconductors. A detailed short-term and long-term analysis is presented in terms of cost, energy impact, size, and efficiency improvement in various applications, including motor drives, automotive, data centers, aerospace, power systems, distributed energy systems, and consumer electronics. In addition, the paper highlights the benefits of WBG semiconductors in power conversion applications by considering the current and future market trends.

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Section: Introductionmentioning

confidence: 99%

Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends

Chaudhary,

Denaï,

Refaat

et al. 2023

Energies

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“…In [249]- [255], some guidelines are given about the principles, modelling, analyses and evaluation of the reliability metric. Moreover, in [256] and [257], as two comprehensive review papers, some materials are provided about the lifetime and fault management techniques, respectively, to improve reliability in the power electronic converters.…”

Section: O Reliabilitymentioning

confidence: 99%

Nonisolated High Step-Up DC–DC Converters: Comparative Review and Metrics Applicability

Tarzamni

Gohari

Sabahi

et al. 2024

IEEE Trans. Power Electron.

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Due to the extensive role of non-isolated high step-up DC-DC converters (NHSDC)s in industrial applications and academic research, many of these pulse width modulation converters have been presented in recent years. For each of these NHSDCs, some claims are introduced to verify its capabilities and features, which has been investigated in some review papers with different frameworks. Dissimilar to previous review papers, which have focused on the classification and derivation of voltage boosting techniques, this paper aims to evaluate the converters from various topological and operational points of view, and determine the superiority of each technique and converter according to applications. Some of these metrics are voltage gain, stresses, ripple, cost, power density, weight, size, control complexity and components count which lead to a comprehensive comparative study. Then, as the main purpose of this paper, effectiveness of these metrics is assessed to show how well they can lead us to the fair comparison results. Moreover, some new figures of merit are proposed in this paper to provide a helpful guideline in power electronic converters comparison studies. Finally, the feasibility discussion of single-and multi-objective figures of merit is followed by general practical conclusion and outlook about the NHSDC structures.

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“…This figure divides the discussion of the reliability of power converters into two aspects: fault management and lifetime management. However, in research, There is usually a distinction between these two reliability areas [16]. Fault management is responsible for managing the catastrophic faults in converters, such as Short-Circuit (SC) and Open-Circuit (OC) faults that can cause destructive damage [17].…”

Section: Introductionmentioning

confidence: 99%

“…It consists of three major subcategories: lifetime analysis, lifetime prediction, and lifetime extension. However, the focus of this survey is just on the fault management aspect of reliability, especially fault compensation and the survey on lifetime management of power electronic converters has been discussed in [16]. Power semiconductors and capacitors are the most vulnerable power electronic components [18]; therefore, the reliability of power converters mostly focuses on these failure-prone power electronic components.…”

Section: Introductionmentioning

confidence: 99%

Fault Management Techniques to Enhance the Reliability of Power Electronic Converters: An Overview

et al. 2023

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The reliability of power electronic converters is a major concern in industrial applications because of using prone-to-failure elements such as high-power semiconductor devices and electronic capacitors. Hence, designing fault-tolerant inverters has been of great interest among researchers in both academia and industry over the last decade. Among the three stages of fault management, compensating the fault is the most important and challenging part. The techniques for fault compensation can be classified into three groups: hardware redundancy methods which use extra switches, legs, or modules to replace the faulty parts directly or indirectly, switching states redundancy methods which are about omitting and replacing the impossible switching states, and unbalance compensation including the techniques to compensate for the unbalances in the system caused by a fault. In this paper, an overview of fault-tolerant inverters is presented. A classification of fault-tolerant inverters is demonstrated and major cases in each of its categories are explained.

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An Overview of Lifetime Management of Power Electronic Converters

Cited by 44 publications

References 124 publications

Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends

Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends

Nonisolated High Step-Up DC–DC Converters: Comparative Review and Metrics Applicability

Fault Management Techniques to Enhance the Reliability of Power Electronic Converters: An Overview

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