An overview of plasticity of Si crystals governed by dislocation motion

Yonenaga, Ichiro

doi:10.1016/j.engfracmech.2015.08.001

Cited by 39 publications

(17 citation statements)

References 69 publications

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“…Silicides and eutectic alloys outperform Si and SiC in mechanical properties . Some silicides show ductile transition at several hundred degrees, and the brittle‐to‐ductile transition temperature of silicide is lower than that of Si . High‐fracture toughness of silicides is expected above the transition temperature.…”

Section: Introductionmentioning

confidence: 99%

“…[14][15][16][17][18][19] Some silicides show ductile transition at several hundred degrees, and the brittle-to-ductile transition temperature of silicide is lower than that of Si. 14,18,20,21 High-fracture toughness of silicides is expected above the transition temperature. Moreover, Si eutectic alloys have a fracture toughness that is several times higher than Si due to fine alloy microstructure.…”

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confidence: 99%

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Oxidation mechanisms of SiC‐fiber–reinforced Si eutectic alloy matrix composites at elevated temperatures

et al. 2019

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SiC‐fiber–reinforced binary Si eutectic alloy composites have been developed for aerospace applications using the melt infiltration method. In this study, the oxidation mechanisms of various binary Si eutectic alloys were evaluated at elevated temperatures. We suggest that the oxidation resistance of eutectic alloys could be predicted using the Gibbs energy change for the oxidation reaction. Based on these calculations, eutectic alloys of Si‐16at%Ti, Si‐17at%Cr, Si‐22at%Co, Si‐38at%Co, and Si‐27at%Fe were prepared. These alloys produced uniform SiO2 layers and showed the same oxidation resistance as Si at 1000°C under humid conditions. Therefore, SiC composites using Si alloys with excellent oxidation resistance can be predicted using thermodynamic calculations.

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

Oxidation mechanisms of SiC‐fiber–reinforced Si eutectic alloy matrix composites at elevated temperatures

et al. 2019

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“…There is still a controversy about this issue even for Si. 6,11) GaAs and InP with the zinc blend structure seemingly show glide dislocations in the shuffle set at room temperature. 12) TEM observations showed dissociated Shockley partial dislocations of b = 1/6h 211i in ZnS, 7,13) indicating slip on the glide-set plane.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Calculations of Characters and Stability of Glide Dislocations in Zinc Sulfide

et al. 2019

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Generalized stacking fault energies were calculated to understand dislocation characters and stability in zinc sulfide (ZnS) by using the density functional theory calculations. Peierls stresses and dislocation self energies were estimated for perfect and dissociated dislocations on glide-set and shuffle-set planes in ZnS in a framework of the PeierlsNabarro model. It was found that Peierls stresses of the shuffle-set dislocations are smaller than those of the glide-set dislocations whereas dislocation self energies of the shuffle set are larger. It is experimentally known that the dissociated glide-set dislocations can be more easily formed and multiplied during plastic deformation in darkness at room temperature. It is suggested that the glide-set dislocations can be primarily activated due to their lower self energy, in spite of their higher Peierls stress.

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“…Its high strength also makes it suitable as a structural material for microelectromechanical systems (MEMS), and its electronic characteristics make it the primary functional component for electronic devices. However, the intrinsic brittleness of Si often leads to catastrophic failures in these structural components 2 . The reliability of MEMS gyroscopes could be notably improved by increasing the failure strength of the structural Si to resist shock loading in mobile phone applications 3 .…”

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confidence: 99%

“…Notable plasticity in bulk Si has only been observed either at high temperatures (≥0.6 T melt ) 2 or under a confining pressure to suppress fracture 9 . Micromechanical tests, e.g.…”

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confidence: 99%

Achieving micron-scale plasticity and theoretical strength in Silicon

et al. 2020

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As the backbone material of the information age, silicon is extensively used as a functional semiconductor and structural material in microelectronics and microsystems. At ambient temperature, the brittleness of Si limits its mechanical application in devices. Here, we demonstrate that Si processed by modern lithography procedures exhibits an ultrahigh elastic strain limit, near ideal strength (shear strength~4 GPa) and plastic deformation at the micron-scale, one order of magnitude larger than samples made using focused ion beams, due to superior surface quality. This extended elastic regime enables enhanced functional properties by allowing higher elastic strains to modify the band structure. Further, the micron-scale plasticity of Si allows the investigation of the intrinsic size effects and dislocation behavior in diamond-structured materials. This reveals a transition in deformation mechanisms from full to partial dislocations upon increasing specimen size at ambient temperature. This study demonstrates a surface engineering pathway for fabrication of more robust Si-based structures.

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An overview of plasticity of Si crystals governed by dislocation motion

Cited by 39 publications

References 69 publications

Oxidation mechanisms of SiC‐fiber–reinforced Si eutectic alloy matrix composites at elevated temperatures

Oxidation mechanisms of SiC‐fiber–reinforced Si eutectic alloy matrix composites at elevated temperatures

Theoretical Calculations of Characters and Stability of Glide Dislocations in Zinc Sulfide

Achieving micron-scale plasticity and theoretical strength in Silicon

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