An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

Xue, Huijun; He, Qiming; Jian, Guangzhong; Long, Shibing; Pang, Tao; Liu, Ming

doi:10.1186/s11671-018-2712-1

Cited by 196 publications

(94 citation statements)

References 78 publications

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“…Figure k shows that secondary electron cut‐off (threshold) energies of the He I (21.22 eV) UPS spectrum of GaSe flakes is ≈16.5 eV, corresponding to a WF of 4.7 eV. The shoulder observed in the UPS spectrum can be attributed to the presence of surface oxides, e.g., Ga 2 O 3 , which exhibits a n‐type behavior (corresponding to a WF < 4.5 eV) originated by oxygen vacancies . The inset to Figure k shows the UPS spectrum region near the E F , which allows the E VBM to be estimated at ≈−5.6 eV.…”

Section: Resultsmentioning

confidence: 97%

Solution‐Processed GaSe Nanoflake‐Based Films for Photoelectrochemical Water Splitting and Photoelectrochemical‐Type Photodetectors

Zappia

Bianca

Bellani

et al. 2020

Adv Funct Materials

103

106

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Gallium selenide (GaSe) is a layered compound, which has been exploited in nonlinear optical applications and photodetectors due to its anisotropic structure and pseudodirect optical gap. Theoretical studies predict that its 2D form is a potential photocatalyst for water splitting reactions. Herein, the photoelectrochemical (PEC) characterization of GaSe nanoflakes (single‐/few‐layer flakes), produced via liquid phase exfoliation, for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) in both acidic and alkaline media is reported. In 0.5 m H2SO4, the GaSe photoelectrodes display the best PEC performance, corresponding to a ratiometric power‐saved metric for HER (Φsaved,HER) of 0.09% and a ratiometric power‐saved metric for OER (Φsaved,OER) of 0.25%. When used as PEC‐type photodetectors, GaSe photoelectrodes show a responsivity of ≈0.16 A W−1 upon 455 nm illumination at a light intensity of 63.5 µW cm−2 and applied potential of −0.3 V versus reversible hydrogen electrode (RHE). Stability tests of GaSe photodetectors demonstrated a durable operation over tens of cathodic linear sweep voltammetry scans in 0.5 m H2SO4 for HER. In contrast, degradation of photoelectrodes occurred in both alkaline and anodic operation due to the highly oxidizing environment and O2‐induced (photo)oxidation effects. The results provide new insight into the PEC properties of GaSe nanoflakes for their exploitation in photoelectrocatalysis, PEC‐type photodetectors, and (bio)sensors.

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Section: Resultsmentioning

confidence: 97%

Solution‐Processed GaSe Nanoflake‐Based Films for Photoelectrochemical Water Splitting and Photoelectrochemical‐Type Photodetectors

Zappia

Bianca

Bellani

et al. 2020

Adv Funct Materials

103

106

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“…According to previously published data, the work function of Au was estimated to be of 5.2–5.3 eV [ 63 , 64 ], while the reported value for Pt was in the range of 5.6–5.9 eV [ 3 , 64 ]. A value of 4.0 eV was reported for the electron affinity of Ga 2 O 3 leading to the formation of a Schottky barrier height of 1.2 eV at the Au/Ga 2 O 3 interface according to the Schottky–Mott rule [ 3 , 5 , 63 , 65 ]:

where Φ B is the barrier height, Φ Au is the Au work function, and χ is the electron affinity of β-Ga 2 O 3 .…”

Section: Resultsmentioning

confidence: 99%

Highly Porous and Ultra-Lightweight Aero-Ga2O3: Enhancement of Photocatalytic Activity by Noble Metals

et al. 2021

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A new type of photocatalyst is proposed on the basis of aero-β-Ga2O3, which is a material constructed from a network of interconnected tetrapods with arms in the form of microtubes with nanometric walls. The aero-Ga2O3 material is obtained by annealing of aero-GaN fabricated by epitaxial growth on ZnO microtetrapods. The hybrid structures composed of aero-Ga2O3 functionalized with Au or Pt nanodots were tested for the photocatalytic degradation of methylene blue dye under UV or visible light illumination. The functionalization of aero-Ga2O3 with noble metals results in the enhancement of the photocatalytic performances of bare material, reaching the performances inherent to ZnO while gaining the advantage of the increased chemical stability. The mechanisms of enhancement of the photocatalytic properties by activating aero-Ga2O3 with noble metals are discussed to elucidate their potential for environmental applications.

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“…[ 4 ] Gallium oxide (Ga 2 O 3 ) is one of the WBGSs that has ultra‐large band gap ( E g ) of ≈4.8–5.1 eV and optimum Baliga’s figure of merits (BFOM). [ 5–12 ] The band gap of Ga 2 O 3 is smaller than that of diamond having the largest value of ≈5.47 eV in the semiconductor family. [ 13,14 ] It may exist in different polymorphic forms including α‐, β‐, ε‐, γ‐, κ‐, and δ‐Ga 2 O 3 phases, among which β‐Ga 2 O 3 ( C 2/ m ) is the most studied polymorphic model due to its high thermodynamic stability, easy preparation, and superior performance in high power electronic devices, i.e., field‐effect transistor.…”

Section: Introductionmentioning

confidence: 99%

Discovery of New Polymorphs of Gallium Oxides with Particle Swarm Optimization‐Based Structure Searches

Wang

Faizan

et al. 2020

Adv Elect Materials

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Gallium oxide (Ga2O3) has attracted significant research interest for next‐generation high‐efficiency power devices because of its unique electronic properties such as ultra‐wide band gap, high breakdown electric field, and large Baliga’s figure of merit. Ga2O3 crystallizes in a series of reported polymorphs including β‐, α‐, ε‐, κ‐, γ‐, and δ‐Ga2O3, the structures of some of which are still in serious controversy. A polymorph structure search study of Ga2O3 is herein performed by combining particle swarm optimization with first‐principles energetic calculations. In addition to producing the predominant experimental known phases of β‐, α‐, and κ‐Ga2O3, two new polymorphs are found with space group P1true¯ and Pmc21 consisting of four‐ and five‐fold coordinated Ga. They show comparable energy with β‐ and α‐Ga2O3 with the energy difference of several meV per atom, and exhibit robust phonon stability. Similarly, the new phases show quite wide band gaps and small electron effective masses by comparing it with other known phases. The Pmc21 phase shows a calculated spontaneous polarization of 0.277 C m−2, close to that of ε/κ‐Ga2O3. The systemic structure searches also establish a structural relationship between ε‐Ga2O3 and κ‐Ga2O3 and how the electronic properties vary with polymorphic phase change.

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An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

Cited by 196 publications

References 78 publications

Solution‐Processed GaSe Nanoflake‐Based Films for Photoelectrochemical Water Splitting and Photoelectrochemical‐Type Photodetectors

Solution‐Processed GaSe Nanoflake‐Based Films for Photoelectrochemical Water Splitting and Photoelectrochemical‐Type Photodetectors

Highly Porous and Ultra-Lightweight Aero-Ga2O3: Enhancement of Photocatalytic Activity by Noble Metals

Discovery of New Polymorphs of Gallium Oxides with Particle Swarm Optimization‐Based Structure Searches

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