An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Ye, Ran; Xi, Cai; Du, Chenglin; Liu, Haijun; Zhang, Yu; Duan, Xiangyang; Zhu, Jiejie

doi:10.1109/access.2021.3139443

Cited by 27 publications

(4 citation statements)

References 122 publications

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“…It is well known that the growth quality of the GaN buffer is better in the homo-epitaxial GaN substrate. Then, a GaN-on-GaN substrate with an acceptable cost was proposed recently [93] . In a word, the trapping effects are hot and complex issues in the GaN HEMT.…”

Section: Suppression Of Trapping Effectsmentioning

confidence: 99%

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Du,

Ye,

Cai

et al. 2023

J. Semicond.

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The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability. To ensure the quality of the communication signal, linearity is a key parameter during the system design. However, the GaN HEMT usually suffers from the nonlinearity problems induced by the nonlinear parasitic capacitance, transconductance, channel transconductance etc. Among them, the transconductance reduction is the main contributor for the nonlinearity and is mostly attributed to the scattering effect, the increasing resistance of access region, the self-heating effect and the trapping effects. Based on the mechanisms, device-level improvement methods of transconductance including the trapping suppression, the nanowire channel, the graded channel, the double channel, the transconductance compensation and the new material structures have been proposed recently. The features of each method are reviewed and compared to provide an overview perspective on the linearity of the GaN HEMT at the device level.

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Section: Suppression Of Trapping Effectsmentioning

confidence: 99%

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Du,

Ye,

Cai

et al. 2023

J. Semicond.

Self Cite

View full text Add to dashboard Cite

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“…Additionally, their low saturation current limits their utility in RF applications, hampering their widespread adoption. These limitations are partly attributed to traps present in the buffer layer [18]- [20].…”

Section: Introductionmentioning

confidence: 99%

Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction

Yang,

Sun,

et al. 2023

IEEE Access

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This paper presents a GaN-based High Electron Mobility Transistor (HEMT) with a connected dual-channel structure (CDC-HEMT). Specifically, the Al0.05Ga0.95N layer beneath the first channel enables the second channel to be in a non-conducting state while simultaneously increasing the number of electrons available in the conducting state. In contrast to conventional normally-off devices, the CDC-HEMT exhibits excellent DC performance, with a saturation current density increase from 0.67 A/mm to 1.52 A/mm at Vds=10 V and a maximum transconductance increase from 0.30 S to 0.62 S, which is twice as much. Furthermore, the optimal transconductance interval is widened by 1 V. The RF performance of the devices also demonstrates remarkable performance, with a current gain cut-off frequency of 31.8 GHz and a maximum oscillation frequency of 77 GHz. Under square wave testing, the transistors exhibit extremely low delay. The exceptional findings showcased in this study provide compelling evidence that the CDC-HEMT structure is a highly promising technique for utilizing GaN-based HEMTs with superior performance in power switching and microwave applications.INDEX TERMS connect-dual-channel, double heterojunction, GaN normally-off HEMT, trap offset, P-GaN gate.

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“…Silicon carbide and gallium arsenide-based device are being replaced by high electron mobility transistors (HEMTs) that utilizes GaN. The high power density and good thermal characteristics of GaN HEMTs make them preferable to build high power amplifiers [2]. The first step in the design of any highfrequency product is modeling.…”

Section: Introductionmentioning

confidence: 99%

Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects

Nouri

El-Ghazaly

2022

IEEE Access

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In this study, the transmission line concept and the electron transport theory are consolidated in a global modeling approach, the wave-electron-transport (WET) model, to account for the physical phenomena in millimeter-wave devices. No equivalent circuit model is required to represent the innate properties of the device. Hence, the model is reliable for both small-and large-signal analyses. The electrodes of a transistor act as coupled multi-conductor transmission lines at millimeter-wave bands. The WET model consists of a device solver to obtain solutions for carrier-transport equations of the intrinsic device, and an electromagnetic solver (EM solver) to provide solutions for the governing transmission lines equations. As it is crucial to transfer data between these two solvers, an interface scheme is also developed and included in the WET model. The extrinsic parameters of the device are extracted using a novel systematic technique merely based on the physical structure of the transistor. In this paper, the modeling procedure is applied to a fabricated GaN-HEMT device. Power sweep analysis has verified the accuracy of the proposed model under both linear and non-linear operations. Non-uniform voltage distribution caused by traveling waves over the electrodes is elaborately discussed to demonstrate the necessity of incorporating distributed effects.INDEX TERMS Electromagnetic-wave propagations, millimeter-wave transistor, non-linear operations, transmission line concept, wave-electron-transport model.

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An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Cited by 27 publications

References 122 publications

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction

Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects

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