Abstract:This paper presents a novel RC-triggered, field-effect transistor (FET)-based power clamp that can be used in high-voltage complementary metal oxide semiconductor (CMOS) processes. A simple two-stage design provides a fast trigger while keeping the clamp transistor on for much longer than the triggering duration without the need for an additional digital latching circuit. As the presented technique does not require any digital circuits, it is especially useful in bipolar-CMOS-DMOS (BCD) processes, where the im… Show more
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