An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction

Hari, Nikita; Sridhar, R.; Ahsan, Mominul; Haider, Julfikar; Rodrigues, Eduardo M. G.

doi:10.3390/electronics9122007

Cited by 5 publications

(2 citation statements)

References 36 publications

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“…If cost is a significant factor and the application requirements allow for it, SMD-type structures might be a more economical choice. Furthermore, SMD-type devices are designed for surface mounting directly onto the PCB (Printed Circuit Board), simplifying the assembly process [42]. TO-type packages may require additional mounting considerations.…”

Section: Figure 1 Inductive Load Switching Circuit With All Parasitic...mentioning

confidence: 99%

Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations

Faizan,

Han,

Wang

et al. 2024

IEEE Access

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GaN high-electron-mobility transistor (HEMT) has superior features of wide band gap, high electron mobility and very high electric field strength due to its material advantages. By using the GaN HEMT, switching frequency can be enhanced up to megahertz with extremely high efficiency. Unfortunately, GaN HEMTs accomplished by undesirable switching oscillations and voltage spikes due to extremely fast switching frequencies with very high 𝑑𝑣 𝑑𝑡 ⁄ , 𝑑𝑖 𝑑𝑡 ⁄ and parasitic parameters. In this paper, RLC equivalent circuit models are developed for turn on and turn off conditions, including all parasitic components. In addition, the relative effect of each parasitic parameter is analyzed and estimated. Moreover, simple mathematical model is developed for theoretical analysis of switching oscillation phenomenon and, for guidance of snubber or damping circuit design. To validate these simple equivalent circuit models, both circuit simulation and experimental measurements are employed.INDEX TERMS GaN HEMT, RLC equivalent circuit model, parasitic components, snubber circuit, switching oscillations, switching loss reduction.

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Section: Figure 1 Inductive Load Switching Circuit With All Parasitic...mentioning

confidence: 99%

Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations

Faizan,

Han,

Wang

et al. 2024

IEEE Access

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“…Even though some of the empirical parameters lack physical meaning, the models are accurate, fast, and applicable to different devices from the same class [21]. Behavioral modeling is a common modeling method that involves fitting mathematical equations to experimental data without knowledge of the physical mechanism of operation [19,[33][34][35][36][37]. The computational efficiency of behavioral models is their primary advantage [21,23].…”

Section: Introductionmentioning

confidence: 99%

Impact of parasitic elements on the power dissipation of Si superjunction MOSFETs, SiC MOSFETs, and GaN HEMTs

Joshi,

Pande,

Jadli

et al. 2023

Eng. Res. Express

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In power conversion systems, where higher switching frequencies are required for miniaturization, the selection of power switches with lower power loss becomes essential for achieving better efficiency. At higher switching frequencies, the parasitic elements of the power switch largely dictate the efficiency of the power electronic system. Hence, it becomes critical to investigate the impact of parasitic losses on overall efficiency. The parasitic components of the power transistor vary with the semiconductor technology and thus effects the power converter system differently. This paper compares three power switch technologies: Silicon (Si) based Superjunction (SJ) power MOSFET, Silicon Carbide (SiC) based power MOSFET, and Gallium Nitride (GaN) based HEMT, for three different voltage ratings: 650 V, 900 V, and 1200 V. The effect of the parasitic components on the converter efficiency has been demonstrated using an inductive clamped loading circuit implemented in LTSPICE. The results demonstrate that at a frequency of 200 kHz, the total power loss for 650 V power switches was 44 W, 108 W, and 127 W for GaN, SiC, and SJ, respectively. At 500 kHz, the total power loss for 1200 V power switches was 622 W and 720 W for GaN and SiC, respectively. Overall, the GaN technology provides lower power losses than SiC and SJ due to lower parasitic capacitance and on-resistance, indicating the potential of GaN power devices for higher voltage applications. This comparison enables a power engineer to select an appropriate power switch that ensures the best possible efficiency for a specific application.

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Analytical model development of surface potential, electric field, and subthreshold swing for junction-less GaN FINFET, for next generation RFIC application

Reddy,

Panda

2023

Multiscale and Multidiscip. Model. Exp. and Des.

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An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction

Cited by 5 publications

References 36 publications

Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations

Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations

Impact of parasitic elements on the power dissipation of Si superjunction MOSFETs, SiC MOSFETs, and GaN HEMTs

Analytical model development of surface potential, electric field, and subthreshold swing for junction-less GaN FINFET, for next generation RFIC application

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