An RRAM with a 2D Material Embedded Double Switching Layer for Neuromorphic Computing

Chen, Po–An; Ge, Ruijing; Lee, Jia-Wei; Hsu, Chun-Hsiang; Hsu, Wei-Chou; Akinwande, Deji; Chiang, Meng-Hsueh

doi:10.1109/nmdc.2018.8605915

Cited by 4 publications

(1 citation statement)

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“…A similar performance could be observed on subsequent pulses who were dependent on the previous resistance states. Apart from RRAM devices with traditional metal oxides, short-term synaptic performance of devices fabricated with 2D materials are also under investigation [159][160][161]. Sun et al reported their research on 2D-material-based devices with h-BN as a functional layer [159].…”

Section: Short-term Plasticity For Rram Devicesmentioning

confidence: 99%

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

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