An SiC-Based Half-Bridge Module With an Improved Hybrid Packaging Method for High Power Density Applications

A Review of SiC Power Module Packaging: Layout, Material System and Integration

“…Fig. 4 from Z. Chen and R. Wang from CPES [26], [28], and C. Chen from Huazhong University of Science & Technology (HUST) proposed a hybrid package for SiC modules [27]. This concept utilizes multi-layer substrates (DBC + DBC or DBC + PCB) to separate device die and current commutation traces, while the dies sits in a "caved space" surrounded by a second layer substrate.…”

“…This idea has been proven to be capable of further mitigating the influences from packaging parasitics. It is a good approach to improve the density and efficiency of power electronics converters [25]- [27], [51], [116]- [123]. The Intelligence Power Module (IPM) is one of the successful products which demonstrate this concept.…”

“…The Intelligence Power Module (IPM) is one of the successful products which demonstrate this concept. SiC module may require a higher level of functional and structural integration trimmed for the new characteristics of the device [27], [51], [53], [55], [121], [122], [124].…”

A 1200 V/200 A Half-Bridge Power Module Based on Si IGBT/SiC MOSFET Hybrid Switch

“…The total inductance between the Si IGBTs and the SiC MOSFET is less than 10 nH, which has little influence on the dynamic current sharing among the devices [13]. As a comparison, the commercial TO-247 packaged devices which were commonly used in the aforementioned studies have more than 15 nH parasitic inductance in power path [21]. With the module design, the parasitic inductance is decreased a lot.…”

Review of State-of-the-Art Integration Technologies in Power Electronic Systems

“…However, the power loop in these improved wirebond-less structures are still a lateral structure. In [48]- [50], a hybrid packaging structure with multilayer substrates are utilized to realize the vertical power loop with small parastics.…”