An SiC MESFET-Based MMIC Process

Sudow, M.; Andersson, Kristoffer; Billström, Niklas; Grahn, Jan; Hjelmgren, Hans; Nilsson, Johan; Nilsson, Per Åke; Ståhl, Johan; Zirath, Herbert; Rorsman, Niklas

doi:10.1109/tmtt.2006.885563

Cited by 35 publications

(11 citation statements)

References 16 publications

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“…It is implemented by mesa etching in a complex epitaxial layer stack on top of a monocrystalline SiC wafer. In this technology, an OR/NOR gate [28], emitter-coupled logic (ECL)-based logic circuits [29], operational amplifier [30], differential amplifier [31], high current linear voltage regulator [32], and 8-bit DAC [33] were implemented and characterized up to 500 • C. Though BJTs and CMOS are the most popular flavors in silicon-based technologies, JFET [34], [35] and MESFET [36], [37] technologies have also been researched in the favor of stable operation at high temperatures. Although the MOSFET gate dielectric reliability has been a concern [38], [39], more recent work contradicts the poor reliability prediction and predict much longer lifetimes [40].…”

Section: Integrated Digital and Analog Circuit Blocks In Amentioning

confidence: 99%

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Romijn

Vollebregt

Middelburg

et al. 2022

IEEE Trans. Electron Devices

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The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a low-voltage SiC technology for integrated circuits is of paramount importance. Here, we report on a scalable and open state-of-the-art SiC CMOS technology that addresses this need. An overview of technology parameters, including MOSFET threshold voltage, subthreshold slope, slope factor, and process transconductance, is reported. Conventional integrated digital and analog circuits, ranging from inverters to a 2-bit analog-to-digital converter, are reported. First yield predictions for both analog and digital circuits show great potential for increasing the amount of integrated devices in future applications.

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Section: Integrated Digital and Analog Circuit Blocks In Amentioning

confidence: 99%

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Romijn

Vollebregt

Middelburg

et al. 2022

IEEE Trans. Electron Devices

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“…Presently Schottky diode limiters are being used for low-power operation [3]. However, development of high-power SiC Schottky diodes will enable to use it as highpower limiter [5][6][7]. In general, multistage limiters with different threshold power level are used in a system [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

Schottky diode-based microwave limiter with adjustable threshold power level

Bera

Basak

Jain

et al. 2010

Microw. Opt. Technol. Lett.

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“…The unique material properties of SiC are favourable for broadband and microwave power applications. [1] Johnson's Figure of Merit (JMF) addresses the potential of a material for high frequency and high-power applications:…”

Section: Introductionmentioning

confidence: 99%

Physical simulations and experimental results of 4H-SiC MESFETs on high purity semi-insulating substrates

陈刚

柏松²,

李哲洋³

et al. 2009

Chinese Phys. B

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In this paper we report on DC and RF simulations and experimental results of 4H-SiC metal semiconductor field effect transistors (MESFETs) on high purity semi-insulating substrates. DC and small-signal measurements are compared with simulations. We design our device process to fabricate n-channel 4H-SiC MESFETs with 100 μm gate periphery. At 30 V drain voltage, the maximum current density is 440 mA/mm and the maximum transconductance is 33 mS/mm. For the continuous wave (CW) at a frequency of 2 GHz, the maximum output power density is measured to be 6.6 W/mm, with a gain of 12 dB and power-added efficiency of 33.7%. The cut-off frequency (fT) and the maximum frequency (fmax) are 9 GHz and 24.9 GHz respectively. The simulation results of fT and fmax are 11.4 GHz and 38.6 GHz respectively.

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An SiC MESFET-Based MMIC Process

Cited by 35 publications

References 16 publications

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Schottky diode-based microwave limiter with adjustable threshold power level

Physical simulations and experimental results of 4H-SiC MESFETs on high purity semi-insulating substrates

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