2019
DOI: 10.1109/tns.2018.2885693
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An SRAM-Based Radiation Monitor With Dynamic Voltage Control in 0.18-<inline-formula> <tex-math notation="LaTeX">$\mu$ </tex-math> </inline-formula>m CMOS Technology

Abstract: This paper presents a novel radiation monitor which is based on a custom SRAM (Static Random Access Memory) ASIC. Its sensitivity is adjustable through its core supply voltage and the radiation monitoring is based on the upset rate that is measured during a measurement-interval in the memory. The sensor has different supply voltages for the SRAM core and the interface logic to prevent incorrect digital signals during the measurement cycle. The memory was processed in a 0.18 µm CMOS technology and was tested wi… Show more

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Cited by 15 publications
(4 citation statements)
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“…A low-cost alternative to diode-based detectors are the SRAM-based detectors. Due to high sensitivity of SRAM cells to particle strikes, a stand-alone SRAM chip can be used to measure the particle count rate in terms of the number of bit-flips [5,6], from which the particle flux can be determined. The advantages of SRAM detectors are simple operating principle and fully digital processing.…”
Section: Related Work and Paper Contributionmentioning
confidence: 99%
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“…A low-cost alternative to diode-based detectors are the SRAM-based detectors. Due to high sensitivity of SRAM cells to particle strikes, a stand-alone SRAM chip can be used to measure the particle count rate in terms of the number of bit-flips [5,6], from which the particle flux can be determined. The advantages of SRAM detectors are simple operating principle and fully digital processing.…”
Section: Related Work and Paper Contributionmentioning
confidence: 99%
“…Note that the rise and fall time constants depend on the particle's strike location and angle of incidence. The collected charge Q (in pC) can be expressed in terms of effective charge collection length l (in μm) and particle LET through the relation (6). For this analysis we have chosen l = 2.1 μm, based on the results for 130 nm technology obtained from device simulations [22].…”
Section: Simulation Setupmentioning
confidence: 99%
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“…As technologies have scaled down, single particle strikes can upset multiple cells simultaneously, depending on the particle energy. As indicated in [72], the ratio of MCU and SCU can be used to estimate the particle energy. The radiation detectors used in ESA [73], CERN [74] and satellite mission [75] have embedded multiple commercial off-the-shelf (COTS) SRAMs for SEU monitoring.…”
Section: Sram Based Radiation Monitormentioning
confidence: 99%