An Ultra-Compact On-Chip Reconfigurable Bandpass Filter With Semi-Lumped Topology by Using GaAs pHEMT Technology

Abstract

A semi-lumped reconfigurable on-chip bandpass filter with GaAs pHEMT technology is presented in this paper. Three order tunable bandpass filter is designed with serial lumped capacitors, parallel resonators, and reconfigurable components. The operating bands are adjusted by field effect transistors and its corresponding gate bias circuits with GaAs technology. The semi-lumped topology, intending to reduce the size of the circuit, is employed to construct the parallel resonators, which are implemented with short-ended stubs and metal-insulator-metal capacitors. The equivalent circuit model is built to interpret the mechanism of the on-chip reconfigurable bandpass filter. Compared with the traditional tunable filters, an ultra-compactness feature and low insertion loss are obtained with the proposed design. The size of the on-chip filter is only 0.8×1.07 mm 2 , which is equivalent to 0.08×0.11 λ 2 g at 10 GHz. The presented filter is reconfigurable in two frequency bands, one is centered at 10 GHz with a fraction bandwidth (FBW) of 24.94% and the other is operated at 8.8 GHz with a FBW of 13.35%. The tuning range of the FBW is 30.6%. Good agreements are observed between the simulated and measured S-parameters. INDEX TERMS GaAs pHEMT, miniaturized, on-chip, reconfigurable bandpass filter, semi-lumped topology.

Compact Millimeter-Wave On-Chip Dual-Band Bandpass Filter in 0.15-μm GaAs Technology

“…ITH the development of new generation multi-service wireless communication systems, millimeter-wave multi-band bandpass filters (BPFs) have attracted increasing attention recently. Although various design methods for millimeter-wave BPFs have been presented including on-chip planar structures [1][2][3][4][5][6][7][8][9][10][11] and waveguide configurations [12][13][14], most of them are with only single band. So far, there has been little research on dual-band or even multi-band BPFs using semiconductor technology at millimeter-wave frequencies.…”

“…However, the sizes of these waveguide devices are inherently bulky, and they are difficult to integrate with some other front-end modules for the final system-in-package (SiP) or system on a chip (SoC). In contrast, the on-chip BPFs using SiGe, GaAs and CMOS with single frequency band [1][2][3][4][5][6][7][8] and dual-band [9][10][11] are readily useful due to the advantages of small sizes and ease of integration. In [9], a dual-band on-chip BPF at 24 and 60 GHz using a 0.18-μm standard CMOS process was designed through loading several quarter-wavelength stepped-impedance resonators.…”

Design Technique for Multilayered Filters Composed of LC Resonators

“…But the The associate editor coordinating the review of this manuscript and approving it for publication was Wenjie Feng. frequency responses of the multilayered filters are always unpredictable due to complicated parasitic effects [7], [8]. In fact, a spiral is not a single inductor in the RF band.…”

Analysis, Design, and Actual Fabrication of a Hybrid Microstrip-SIW Bandpass Filter Based on Cascaded Hardware Integration at X-Band

“…SIW structures, which act as highpass filters, are used in filter design due to their mentioned properties [5]. Different structures are used to obtain a bandpass filter in Manuscript received 11 August, 2020; accepted 23 December, 2020. some of the previous studies, such as microstrip structure [5], air-filled structure [6], symmetric inductive post structure [7], resonator structure [8], bent structure [9], Low Temperature Co-fired Ceramics (LTCC) structure [10], Through-Silicon Via (TSV) structure [11], cross-coupled structure [12], perturbed circular cavity structure [13], Fourier-varying via-vole walling structure [14], and GaAsbased chip filter structure [15], [16]. As the microstrip structure is easier, cheaper, and more comprehensible, it is preferred for the lowpass filter section of the bandpass filter [17].…”