An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash

Yang, Haozhang; Huang, Peng; Han, Runze; Liu, Xiaoyan; Kang, Jinfeng

doi:10.1007/s11432-021-3502-4

Cited by 12 publications

(1 citation statement)

References 40 publications

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“…Flash is based on moving the electric charge on and off of a floating-gate structure, thereby modifying the effective threshold voltage of the device. A number of CAM designs based on both NOR and NAND Flash alternatives have been proposed [59], [60], [61], [62], [63], [64]. In addition to the small area footprint and reduced power consumption compared to conventional CMOS-based CAM designs, Flash technology is mature enough for large-scale integration [60].…”

Section: E: Rram-based Cammentioning

confidence: 99%

FASTA: Revisiting Fully Associative Memories in Computer Microarchitecture

Garzón,

Hanhan,

Lanuzza

et al. 2024

IEEE Access

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Associative access is widely used in fundamental microarchitectural components, such as caches and TLBs. However, associative (or content addressable) memories (CAMs) have been traditionally considered too large, too energy-hungry, and not scalable, and therefore, have limited use in modern computer microarchitecture. This work revisits these presumptions and proposes an energy-efficient fullyassociative tag array (FASTA) architecture, based on a novel complementary CAM (CCAM) bitcell. CCAM offers a full CMOS solution for CAM, removing the need for time-and energy-consuming precharge and combining the speed of NOR CAM and low energy consumption of NAND CAM. While providing better performance and energy consumption, CCAM features a larger area compared to state-of-the-art CAM designs. We further show how FASTA can be used to construct a novel aliasing-free, energy-efficient, Very-Many-Way Associative (VMWA) cache. Circuit-level simulations using 16 nm FinFET technology show that a 128 kB FASTA-based 256-way 8-set associative cache is 28% faster and consumes 88% less energy-per-access than a same sized 8-way (256-set) SRAM based cache, while also providing aliasingfree operation. System-level evaluation performed on the Sniper simulator shows that the VMWA cache exhibits lower Misses Per Kilo Instructions (MPKI) for the majority of benchmarks. Specifically, the 256way associative cache achieves 17.3%, 11.5%, and 1.2% lower average MPKI for L1, L2, and L3 caches, respectively, compared to a 16-way associative cache. The average IPC improvement for L1, L2, and L3 caches are 1.6%, 1.4%, and 0.2%, respectively.

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Section: E: Rram-based Cammentioning

confidence: 99%

FASTA: Revisiting Fully Associative Memories in Computer Microarchitecture

Garzón,

Hanhan,

Lanuzza

et al. 2024

IEEE Access

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Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals

Li,

Tang,

Wang

et al. 2024

Advanced Science

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Hafnium oxide (HfO2)‐based devices have been extensively evaluated for high‐speed and low‐power memory applications. Here, the influence of aluminum (Al) and lanthanum (La) co‐doping HfO2 thin films on the ferroelectric characteristics of hafnium‐based devices is investigated. Among devices with different La/Al ratios, the Al and La co‐doped hafnium oxide (HfAlAO) device with 4.2% Al and 2.17% La exhibited the excellent remanent polarization and thermostability. Meanwhile, first principal analyses verified that hafnium‐based thin films with 4.2% Al and 2.17% La promoted the formation of the o‐phase against the paraelectric phase, providing theoretical support for supporting experimental results. Furthermore, a vertical ferroelectric HfO2 memory based on 3D macaroni architecture is reported. The devices show excellent ferroelectric characteristics of 22 µC cm−2 under 4.5 MV cm−1 and minimal coercive field of ≈1.6 V. In addition, the devices exhibit great memory performance, including the response speed of device can achieve 20 ns and endurance characteristic can achieve 1010 cycles.

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Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory

Bian,

Tian,

et al. 2024

Sci. China Inf. Sci.

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An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash

Cited by 12 publications

References 40 publications

FASTA: Revisiting Fully Associative Memories in Computer Microarchitecture

FASTA: Revisiting Fully Associative Memories in Computer Microarchitecture

Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals

Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory

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