An ultrafast and self-powered MoSxSe2−x/Si photodetector with high light-trapping structures and a SiOx interface layer

Yue, Zhen; Shen, Honglie; Wang, Chen; Xu, Yajun; Zheng, Jinjie; Li, Yufang; Zhang, Jingzhe; Chen, Jianian; Bai, Hang; Li, Hechao; Zeng, Jiuchuan; Wang, Long

doi:10.1039/d3nr03845a

Nanoscale

2023

DOI: 10.1039/d3nr03845a

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An ultrafast and self-powered MoS_xSe_2−x/Si photodetector with high light-trapping structures and a SiO_x interface layer

Zhen Yue,

Honglie Shen,

Chen Wang

et al.

Abstract: The MoSxSe2-x nanofilms, as a typical metal dichalcogenide, have attracted great interest, due to the adjustable bandgap and distinctive electronic and optical properties. However, the inherent bandgap of MoSxSe2-x and...

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Ultrafast and self-driven flexible photodetector based on vertical MoS2/Si heterojunction through enhanced light-trapping structures and Al2O3 interface passivation

Yue,

Shen,

Wang

et al. 2024

Applied Surface Science

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Ultrafast and self-driven flexible photodetector based on vertical MoS2/Si heterojunction through enhanced light-trapping structures and Al2O3 interface passivation

Yue,

Shen,

Wang

et al. 2024

Applied Surface Science

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The Influence of Surface Treatment on the Performance of Photoconductive Detectors Based on Silicon Wafer

Wu,

Zhang,

Shi

et al. 2024

IEEE Sensors J.

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An ultrafast and self-powered MoS_xSe_2−x/Si photodetector with high light-trapping structures and a SiO_x interface layer

Abstract: The MoSxSe2-x nanofilms, as a typical metal dichalcogenide, have attracted great interest, due to the adjustable bandgap and distinctive electronic and optical properties. However, the inherent bandgap of MoSxSe2-x and...

Cited by 2 publications

References 63 publications

Ultrafast and self-driven flexible photodetector based on vertical MoS2/Si heterojunction through enhanced light-trapping structures and Al2O3 interface passivation

Ultrafast and self-driven flexible photodetector based on vertical MoS2/Si heterojunction through enhanced light-trapping structures and Al2O3 interface passivation

The Influence of Surface Treatment on the Performance of Photoconductive Detectors Based on Silicon Wafer

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