An ultrastable large-area atomically flat 2D polymer dielectric for low-voltage flexible organic field-effect transistors

Wang, Jiamin; Yuan, Jiangyan; Li, Bin; Wang, Zhaofeng; Ma, Chunlan; Yang, Shuyuan; Yao, Jiarong; Ren, Yiwen; Wu, Xianshuo; Lei, Shengbin; Yang, Fangxu; Li, Rongjin; Hu, Wenping

doi:10.1039/d2tc05059e

Cited by 3 publications

(3 citation statements)

References 47 publications

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“…The OTFT exhibit larger on-state I DS , with the V GS and V DS increasing to −10 V. After 1000 repeated tensile and compressive bending cycles, the µ sat slightly decreases to 0.39 cm 2 Vs −1 , from the pristine 0.41 cm 2 Vs −1 , and the V T slightly negatively shifts no more than 0.5 V. The results indicate that the present flexible OTFT has an excellent mechanical bending durability. In comparison, our flexible OTFT with an optimal composite gate dielectric exhibits a higher mobility and better mechanical bending property, than those of the recently reported lowvoltage operating OTFTs [13,14,[30][31][32][33][34][35][36][37], as summarized in table 1.…”

Section: Resultsmentioning

confidence: 77%

Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric

Su,

Yan,

Lin

et al. 2024

Semicond. Sci. Technol.

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Low-voltage operation is one of the prerequisites for the practical applications of the organic thin-film transistors (OTFTs). Up to date, the most reported low-voltage operatable OTFTs use a bottom-gate structure, and are fabricated by several different technologies in the whole process, in which the organic semiconductors and/or gate dielectrics are prepared in the expensive vacuum equipment. The simple fabricating technologies and fewer processes can better demonstrate the inherent advantages, and enhance the commercial competitiveness of OTFTs. Here, we propose a strategy to fabricate the binary polymers gate dielectric by one-step spin-coating in the top-gate structured flexible OTFTs, by which not only the device performances are prominently improved, but also the fabricating process of the OTFTs is minimized. As a result, the flexible OTFTs exhibit a high mobility over 0.5 cm2/Vs, low threshold voltage near to -0.5 V, and excellent mechanical bending durability with a very slightly performances degradation after the tensile and compressive bending at a small curvature radius of 3.0 mm over 1000 cycles.

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Section: Resultsmentioning

confidence: 77%

Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric

Su,

Yan,

Lin

et al. 2024

Semicond. Sci. Technol.

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“…We further replaced the inorganic HAO dielectric layer with a flexible 2D polymer film, successfully constructing a flexible 1T1R device (Figure S15, Supporting Information). [46] To uncover the origin of the low SS ave , we delved into the underlying mechanisms of the memristor. Typically, metal/insulator/metal (MIM) memristors involve at least one electrochemically active metal like Ag or Cu, with memristive behavior originating from conductive metal filament formation and fusion within the active materials.…”

Section: Resultsmentioning

confidence: 99%

“…We further replaced the inorganic HAO dielectric layer with a flexible 2D polymer film, successfully constructing a flexible 1T1R device (Figure S15, Supporting Information). [ 46 ]…”

Section: Resultsmentioning

confidence: 99%

Overcoming the Unfavorable Effects of “Boltzmann Tyranny:” Ultra‐Low Subthreshold Swing in Organic Phototransistors via One‐Transistor‐One‐Memristor Architecture

Yang,

Yuan,

Wang

et al. 2024

Advanced Materials

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Organic phototransistors (OPTs), as photosensitive organic field‐effect transistors (OFETs), have gained significant attention due to their pivotal roles in imaging, optical communication, and night vision. However, their performance has been fundamentally limited by the Boltzmann distribution of charge carriers, which constrains the average subthreshold swing (SSave) to a minimum of 60 mV/decade at room temperature. In this study, we propose an innovative one‐transistor‐one‐memristor (1T1R) architecture to overcome the Boltzmann limit in conventional OFETs. By replacing the source electrode in an OFET with a memristor, the 1T1R device exploits the memristor's sharp resistance state transitions to achieve an ultra‐low SSave of 18 mV/decade. Consequently, the 1T1R devices demonstrate remarkable sensitivity to photo illumination, with a high specific detectivity of 3.9 × 109 cm W−1Hz1/2, outperforming conventional OPTs (4.9 × 104 cm W−1Hz1/2) by more than four orders of magnitude. The 1T1R architecture presents a potentially universal solution for overcoming the detrimental effects of “Boltzmann tyranny,” setting the stage for the development of ultra‐low SSave devices in various optoelectronic applications.This article is protected by copyright. All rights reserved

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Anion Bulk Doping of Organic Single‐Crystalline Thin Films for Performance Enhancement of Organic Field‐Effect Transistors

Dong,

Deng,

Wang

et al. 2024

Adv Funct Materials

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Chemical doping is a powerful way to enhance the electrical performance of organic electronics. To avoid perturbing the ordered molecular packing of organic semiconducting hosts, molecular dopants are deposited on the surface of highly crystalline organic semiconductor thin films. However, such surface doping protocols not only limit charge‐transfer efficiency but also cause dopant diffusion problems, which significantly reduce charge carrier mobility and device stability. Here, an innovative anion bulk doping strategy is reported that allows effective doping of organic single‐crystalline films (OSCFs) without disrupting molecular ordering to improve the performance of organic field‐effect transistors (OFETs). This method is mediated by anion dopants and can be pictured as an effective charge transfer of dopants with organic semiconductors in liquid phase. The direct introduction of dopant anions overcomes limitations of partial charge transfer while avoiding interference from dopant aggregation with crystallization. Using this method, the average carrier mobility of the OSCFs is boosted by ≈2.5 times. Significantly, low‐voltage OFETs developed from anion‐doped OSCFs exhibit a near‐ideal subthreshold swing of 59.2 mV dec−1 and unparalleled mobility as high as 19.8 cm2 V−1 s−1 together with excellent stability. The concept of anion doping opens new avenues for improving the electrical performance of organic electronics.

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An ultrastable large-area atomically flat 2D polymer dielectric for low-voltage flexible organic field-effect transistors

Abstract: 2D polymers (2DPs) are superb candidates as dielectric layers for flexible organic field-effect transistors (OFETs) because of their fascinating features including high stability, solution processibility, and inherent flexibility. However, the...

Cited by 3 publications

References 47 publications

Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric

Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric

Overcoming the Unfavorable Effects of “Boltzmann Tyranny:” Ultra‐Low Subthreshold Swing in Organic Phototransistors via One‐Transistor‐One‐Memristor Architecture

Anion Bulk Doping of Organic Single‐Crystalline Thin Films for Performance Enhancement of Organic Field‐Effect Transistors

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