An ultrathin MoSe₂ photodetector with near-perfect absorption

Abstract

An ultrathin near-perfect MoSe 2 absorber working in the visible regime is demonstrated theoretically and experimentally, and it consists of a MoSe 2 /Au bi-layer film. The polymerassisted deposition method is used to synthesize MoSe 2 films, which can reduce the roughness and thus improve the film absorption. Simulation results show that the absorption of the absorber with 22 nm MoSe 2 reaches to larger than 90% between 628.5 nm and 718 nm with a peak value up to 99.5% at 686 nm. Moreover, the measured absorption also shows near-perfect absorption of this simple absorber. Finally, an ultrathin photodetector is fabricated based on this perfect absorber and shows on/off reproducibility and remarkable photocurrent, which is three orders of magnitude higher than the dark current.

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

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Multifunctional two-dimensional glassy graphene devices for vis-NIR photodetection and volatile organic compound sensing

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