An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots

Akiyama, T.; Ekawa, Mitsuru; Sugawara, Mitsuru; Kawaguchi, Kenichi; Sudo, H.; Kuramata, Akito; Ebe, H.; Arakawa, Yasuhiko

doi:10.1109/lpt.2005.851884

Cited by 200 publications

(92 citation statements)

References 11 publications

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“…This reflects not only simple quantum-confinement physics, but also electronicstructure effects such as interband, intervalley, spin-orbit, and strain-induced state coupling [4,5], as well as electronphonon scattering probability [6][7][8]. The QD shape allows for the engineering of the QD electronic states in order to effectively extend the performance of various optoelectronic devices [9], ranging from room-temperature QD-based intersubband detectors [10] and lasers [11] to semiconductor optical amplifiers [12], polarization-controlled single-photon emitters for quantum communication systems [13,14], and QD-based photovoltaic cells [15][16][17]. In particular, by controlling QD size and aspect ratio (the ratio between QD height and diameter), it would be possible to tune independently QD emission energy and electron-phonon interaction, two relevant properties in QD-based lasers, solar cells, and detectors.…”

Section: Introductionmentioning

confidence: 99%

Precise shape engineering of epitaxial quantum dots by growth kinetics

et al. 2015

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We show that independent size and morphology engineering of epitaxial quantum dots can be obtained using a kinetically controlled quantum dot fabrication procedure, namely droplet epitaxy. Due to the far-from-equilibrium droplet epitaxy procedure, which is based on the crystallization, under As flux, of a nanometric droplet of Ga, independent and precise tuning of quantum dot size, aspect ratio, and faceting can be achieved. The dependence of the dot morphology on the growth conditions is interpreted and described quantitatively through a model that takes into account the crystallization kinetics of the Ga stored in the droplet under As flux.

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Section: Introductionmentioning

confidence: 99%

Precise shape engineering of epitaxial quantum dots by growth kinetics

et al. 2015

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“…Quantum dots (QDs) have a potential for application in semiconductor optical amplifiers (SOAs), due to their high saturation power related to the low differential gain, fast gain recovery and wide gain spectrum compared to quantum wells (QWs) (Sugawara et al 2001;Berg et al 2003;Akiyama et al 2005). However, polarisation-independence is also needed for in-line amplifier applications.…”

Section: Introductionmentioning

confidence: 99%

Polarization dependence of electroluminescence from closely-stacked and columnar quantum dots

Ridha

Rossetti

et al. 2008

Opt Quant Electron

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Quantum dots (QDs) have a potential for application in semiconductor optical amplifiers (SOAs), due to their high saturation power related to the low differential gain, fast gain recovery and wide gain spectrum compared to quantum wells. Besides all advantages, QDs realized by Stranski-Krastanov growth mode have a flat shape which leads to a gain anisotropy and a related transverse magnetic (TM) and -electric (TE) polarization dependence as compared to bulk material. This has so far prevented their applications in SOAs. It has been suggested that control of optical polarization anisotropy of the QD can be obtained through QD shape engineering, in closely stacked or columnar QDs (CQDs). To this aim, we have fabricated and tested SOA structures based on closely-stacked and columnar QDs. Closely-stacked InAs QDs with 4, 6 and 10 nm GaAs spacer showed a minor improvement in the ratio of TM and TE integrated electroluminescence (EL) over standard QDs along with a strong reduction in efficiency. In contrast, a large improvement was obtained in CQDs, depending on the number of stacked submonolayers which can be attributed to the more symmetric shape of columnar QDs. A relatively small spectral separation ( E ∼ 21 meV) between TE-and TM-EL peaks has been observed showing that heavy-and light hole-like states, respectively are energetically close in these QDs. These results indicate that columnar QDs have a significant potential for polarization-independent QD SOA.

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“…In this context quantumdot (QD) SOAs with their special structure are very promising devices thanks to their distinctive physical properties that have been constantly improving during recent years over conventional SOAs. These include the lower threshold current, the higher saturation output power, the wider gain bandwidth, the lower noise figure, the low polarization gain dependence, the weaker temperature sensitivity and their exceptional faster gain recovery time [41][42][43][44]. The latter characteristic allows them to respond much quicker to ultrafast data compared to SOAs that don't have QDs inserted in their active region and thus they can achieve pattern-free operation more easily.…”

Section: Introductionmentioning

confidence: 99%

On the Feasibility of 320 Gb/S All-Optical and Gate Using Quantum-Dot Semiconductor Optical Amplifier-Based Mach-Zehnder Interferometer

Dimitriadou¹,

Zoiros²

2013

PIER B

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Abstract-The feasibility of realizing an all-optical AND gate for 320 Gb/s return-to-zero data by incorporating quantum-dot semiconductor optical amplifiers (QD-SOAs) in a Mach-Zehnder interferometer (MZI) is theoretically investigated and demonstrated. The proposed scheme employs the QD-SOA-based MZI in a configuration where the QD-SOA in one MZI arm is subject to the first data sequence, the QD-SOA in the other MZI arm receives no such input but is constantly held in the small signal gain regime, and the second data stream is inserted from the common MZI port acting as enabling or disabling signal. Compared to other approaches adopted for the same purpose this implementation is more general, direct, flexible and affordable as only one strong data signal is required to control switching. By conducting numerical simulation the impact of the critical parameters on the Q-factor is thoroughly assessed. The obtained results are interpreted with the help of a complete characterization of the QD-SOA response to an ultrafast data pulse stream. This allows to specify the requirements that the critical parameters must satisfy to achieve acceptable performance. The extracted design rules are technologically realistic and ensure AND operation both with logical correctness and high quality. The outcome of the numerical treatment extends the range of Boolean functions executed with the QD-SOA-MZI module at sub-Tb/s data rates.

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An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots

Cited by 200 publications

References 11 publications

Precise shape engineering of epitaxial quantum dots by growth kinetics

Precise shape engineering of epitaxial quantum dots by growth kinetics

Polarization dependence of electroluminescence from closely-stacked and columnar quantum dots

On the Feasibility of 320 Gb/S All-Optical and Gate Using Quantum-Dot Semiconductor Optical Amplifier-Based Mach-Zehnder Interferometer

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