“…But over the past few decades, most of the research in this field is concentrated in the non‐centrosymmetric metal chalcogenides, [6] which results in many IR‐NLO chalcogenides with excellent comprehensive properties, such as BaGa 4 S 7 , [7] BaGa 4 Se 7 , [8] SnGa 4 S 7 , [9] Sn 2 Ga 2 S 5 , [10] Hg 3 P 2 S 8 , [11] γ‐NaAsSe 2 , [12] Li 2 CdGeS 4 , [13] α‐Li 2 ZnGeS 4 , [14] La 4 InSbS 9 , [15] Na 2 ZnGe 2 S 6 , [16] CsGa 2 SnSe 6 , [17] Li 2 ZnSiS 4 , [18] Li 2 BaGeS 4 , [19] CuHgPS 4 , [20] BaHgGeSe 4 , [21] Sr 5 ZnGa 6 S 15 , [22] [Li 2 Cs 2 Cl][Ga 3 S 6 ], [23] [Rb 3 Br][PGa 3 S 8 ], [24] [CsBa 2 Cl][Ga 4 S 8 ], [25] [Ba 4 Cl 2 ][ZnGa 4 S 10 ] [26] and so on and so forth. Compared with a large number of research results in IR‐NLO chalcogenides, only a few IR‐NLO pnictides are discovered in this area [28–61] and the major research works are still focused on classical binary or ternary semiconductors, such as GaAs, [27] ZnGeP 2 , [5] CdSiP 2 [7] and CdGeAs 2 [29] . Generally, pnictides exhibit small band gaps (E g <2.5 eV) and are difficult to synthesize, which limit their development in the IR‐NLO field.…”