An X-Ku Band Distributed GaN LNA MMIC with High Gain

Abstract

Abstract-A high-gain wideband low noise amplifier (LNA) using 0.25-μm Gallium-Nitride (GaN) MMIC technology is presented. The LNA shows 8 GHz to 15 GHz operation by a distributed amplifier architecture and high gain with an additional common source amplifier as a mid-stage. The measurement results show a flat gain of 25.1±0.8 dB and input and output matching of -12 dB for all targeted frequencies. The measured minimum noise figure is 2.8 dB at 12.6 GHz and below 3.6 dB across all frequencies. It consumes 98 mA with a 10-V supply. By adjusting the gate voltage of the mid-stage common source amplifier, the overall gain is controlled stably from 13 dB to 24 dB with no significant variations of the input and output matching.

A genetic‐algorithm‐based synthesis of microwave integrated distributed amplifiers

“…The DA architecture was chosen for the driver stage to provide a broadband input matching of the amplifier. 38,39 The output stage defines the dynamic range upper limit of the entire BA. Reactive matching (RM) is used in this stage to provide the required dynamic characteristics.…”

“…The main requirements for the 20–30 GHz BA include the output power at the 1 dB gain compression (at least 20 dBm) and gain (at least 12 dB). The DA architecture was chosen for the driver stage to provide a broadband input matching of the amplifier 38,39 . The output stage defines the dynamic range upper limit of the entire BA.…”

“…In the case of BA, the lower and upper levels of the dynamic range should also be considered. Thus, integrated microwave DAs can be used as pre‐ and post‐amplifying stages, 38,39 or a separate amplifying unit 40 . Possible DA applications may also include integrated amplifiers 41 and multi‐function chip 42 …”