Analisis Arus-Voltan bagi Pengubahsuaian Proses Fabrikasi Sel Suria Silikon Jenis-P ke atas Wafer Silikon Jenis-N

Sepeai, Suhaila; Zulhafizhazuan, Wan; Leong, Cheow Siu; Ludin, Norasikin Ahmad; Ibrahim, Mohd Adib; Sopian, Kamaruzzaman; Zaidi, Saleem H.

doi:10.17576/jsm-2017-4610-33

Cited by 1 publication

(1 citation statement)

References 7 publications

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“…The isotropic etching removes the exposed area at similar rate without any preferred direction and it is popular for making textured structures on polycrystalline Si (Macdonald et al 2004). Whereas, the anisotropic etching is a directiondependence, where the alkaline wet etchants such as potassium hydroxide (KOH) and sodium hydroxide (NaOH) are used to etch Si with higher rate in <100> and <110> directions (Park et al 2009;Sepeai et al 2017;Xi et al 2004). Here, the ionized KOH and NaOH generate hydroxyl ions which are responsible for the etching of Si.…”

Section: Introductionmentioning

confidence: 99%

Reflectance Characteristics of Silicon Surface Fabricated with the Arrays of Uniform Inverted Pyramid Microstructures in UV-Visible Range

Abdullah¹,

Hashim²

2019

JSM

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In this paper, inverted pyramidal microstructures are designed and fabricated on silicon (Si) surface. The characteristics of surface reflectance are simulated using two-dimensional (2D) finite-difference time-domain (FDTD) method by varying the spacing (S) and width (W) of the pyramidal microstructures. The results showed that the effect of S is more significant compared to W where the reflectance of the irradiated light has been increased gradually with the increase of S from 0 to 3 µm, and the difference is around 9.6%. Due to the etching constraint, S= 3 µm is chosen for the fabrication. Textured structure is fabricated by the anisotropic etching of tetramethyl-ammonium hydroxide (TMAH) with additional of isopropyl alcohol (IPA). Long etching time of 120 min is required to form uniform arrays of pyramidal microstructures with smooth and well-terminated four sidewalls at (111) plane. Due to the undercut etching under SiO 2 mask, it results to the formation of slightly larger W and smaller S in the fabricated structures. The measured average reflectance in UVvisible range for the Si with inverted pyramidal microstructures is very low down to 10.4%. The discrepancy between the measured and simulated values is speculated to be due to the use of 2D FDTD instead of three-dimensional (3D) FDTD. ABSTRAKDalam kertas ini, mikrostruktur piramid songsang Si bersaiz mikro telah direka bentuk dan difabrikasi di atas permukaan silikon (Si). Ciri pantulan permukaan telah disimulasi menggunakan kaedah domain-masa perbezaan-terhingga (FDTD) dua-dimensi (2D) dengan membezakan jarak dan lebar mikrostruktur piramid. Data menunjukkan kesan jarak (S) adalah lebih ketara jika dibandingkan dengan kesan lebar (W) terhadap pantulan permukaan. Pantulan cahaya yang disinarkan telah meningkat secara beransur-ansur dengan peningkatan S daripada 0 kepada 3 µm dan perbezaan adalah sekitar 9.6%. Disebabkan kekangan punaran, S= 3 µm telah dipilih untuk difabrikasi. Tekstur telah difabrikasi dengan cara punaran anisotropik oleh tetra metil ammonium hidroksida (TMAH) berserta campuran alkohol isopropil (IPA). Punaran pada tempoh yang lama iaitu 120 min diperlukan untuk membentuk jajaran mikrostruktur piramid yang seragam dengan empat sisi tepi pada satah (111) yang licin berserta penamatan yang baik. Disebabkan potongan bawah punaran di bawah topeng SiO 2 , ia membentuk W yang sedikit lebih besar dan S yang lebih kecil bagi struktur yang telah difabrikasi. Purata pantulan dalam julat UV-nampak yang telah diukur bagi Si dengan mikrostruktur piramid songsang adalah sangat rendah iaitu 10.4%. Percanggahan antara nilai yang diukur dengan nilai yang disimulasi telah dispekulasi disebabkan penggunaan FDTD 2D dan bukannya FDTD tiga-dimensi (3D).

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Section: Introductionmentioning

confidence: 99%

Reflectance Characteristics of Silicon Surface Fabricated with the Arrays of Uniform Inverted Pyramid Microstructures in UV-Visible Range

Abdullah¹,

Hashim²

2019

JSM

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Analisis Arus-Voltan bagi Pengubahsuaian Proses Fabrikasi Sel Suria Silikon Jenis-P ke atas Wafer Silikon Jenis-N

Abstract: ABSTRAKSel suria adalah peranti semikonduktor yang menukar tenaga matahari kepada tenaga elektrik. Sel suria generasi pertama terdiri dari sel suria silikon (Si)

Cited by 1 publication

References 7 publications

Reflectance Characteristics of Silicon Surface Fabricated with the Arrays of Uniform Inverted Pyramid Microstructures in UV-Visible Range

Reflectance Characteristics of Silicon Surface Fabricated with the Arrays of Uniform Inverted Pyramid Microstructures in UV-Visible Range

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