Analog front-end cell designed in a commercial 0.25 /spl mu/m process for the ATLAS pixel detector at LHC

Blanquart, L.; Richardson, J. D.; Denes, P.; Einsweiler, K.; Mandelli, E.; Meddeler, G.; Fischer, P.; Ackers, M.; Comes, G.; Perić, I.

doi:10.1109/tns.2002.801682

Cited by 17 publications

(11 citation statements)

References 8 publications

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“…• C): on one hand, the increase of leakage current in irradiated sensors would justify an increase in the noise in the order of tens of electrons rms [20], on the other hand this in- crease might well be compensated by the much lower temperature used for measurements after irradiation. Limiting the comparison to the irradiated samples, it might be puzzling that those irradiated at 2 x 10 15 n eq cm −2 (samples D and E) show lower noise than those irradiated at 1 x 10 15 n eq cm −2 (samples A, B, and C), but it should be noted that this difference might be due to the radiation damage to the electronics rather than to the sensors: in fact, for the 24-GeV proton irradiation a Total Ionizing Dose (TID) of about 94 Mrad has been estimated, whereas the estimated TID is 144 Mrad for 25-MeV proton irradiation.…”

Section: Functional Lab-test Measurementsmentioning

confidence: 99%

Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK

Rosa

Boscardin

Cobal

et al. 2012

Nuclear Instruments and Methods in Physics Research Section A:

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In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10 15 n eq cm −2 , while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation.

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Section: Functional Lab-test Measurementsmentioning

confidence: 99%

Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK

Rosa

Boscardin

Cobal

et al. 2012

Nuclear Instruments and Methods in Physics Research Section A:

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“…The readout chip for the ATLAS pixel detector [1][2][3] shown in Fig. 1 contains 2880 readout cells of 50 mm Â 400 mm size arranged in a 18 Â 160 matrix.…”

Section: Overall Chip Architecturementioning

confidence: 99%

The FEI3 readout chip for the ATLAS pixel detector

Perić

Blanquart

Comes

et al. 2006

Nuclear Instruments and Methods in Physics Research Section A:

233

135

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“…Their design was similar to that of the final front-end electronics for ATLAS Pixel [14,15]. In each front-end chip, 2880 channels are arranged into 18 columns by 160 rows.…”

Section: Front-end Electronicsmentioning

confidence: 99%

Characterization and modeling of non-uniform charge collection in CVD diamond pixel detectors

Lari

Wermes

et al. 2005

Nuclear Instruments and Methods in Physics Research Section A:

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A pixel detector with a CVD diamond sensor has been studied in a 180 GeV/c pion beam. The charge collection properties of the diamond sensor were studied as a function of the track position, which was measured with a silicon microstrip telescope. Non-uniformities were observed on a length scale comparable to the diamond crystallites size. In some regions of the sensor, the charge drift appears to have a component parallel to the sensor surface (i.e., normal to the applied electric field) resulting in systematic residuals between the track position and the hits position as large as 40 µm. A numerical simulation of the charge drift in polycrystalline diamond was developed to compute the signal induced on the electrodes by the electrons and holes released by the passing particles. The simulation takes into account the crystallite structure, non-uniform trapping across the sensor, diffusion and polarization effects. It is in qualitative agreement with the data. Additional lateral electric field components result from the non-uniform trapping of charges in the bulk. These provide a good explanation for the large residuals observed.

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Analog front-end cell designed in a commercial 0.25 /spl mu/m process for the ATLAS pixel detector at LHC

Cited by 17 publications

References 8 publications

Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK

Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK

The FEI3 readout chip for the ATLAS pixel detector

Characterization and modeling of non-uniform charge collection in CVD diamond pixel detectors

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