Analogous Design of a Microlayered Silicon Oxide‐Based Electrode to the General Electrode Structure for Thin‐Film Lithium‐Ion Batteries

Abstract

Development of miniaturized thin‐film lithium‐ion batteries (TF‐LIBs) using vacuum deposition techniques are crucial for low‐scale applications, but addressing low energy density remains a challenge. In this work, we designed structures analogous to SiOx‐based thin‐film electrodes with close resemblance to traditional LIB slurry formulations including active material, conductive agent, and binder. The thin‐film was produced using mid‐frequency (MF) sputtering with a single hybrid target consisting of SiOx nanoparticles, carbon nanotubes, and polytetrafluoroethylene (PTFE). The thin‐film SiOx/PPFC involved a combination of SiOx and conductive carbon within the plasma‐polymerized fluorocarbon (PPFC) matrix. This resulted in enhanced electronic conductivity and superior elasticity and hardness in comparison to a conventional pure SiOx‐based thin‐film. The electrochemical performance of the half‐cell consisting of thin‐film SiOx/PPFC demonstrated remarkable cycling stability, with a capacity retention of 74.8% up to the 1000th cycle at 0.5 C. In addition, a full cell using the LiNi0.6Co0.2Mn0.2O2 thin‐film as the cathode material exhibited an exceptional initial capacity of ∼120 mAh g–1 at 0.1 C and cycle performance, marked by a capacity retention of 90.8% from the first cycle to the 500th cycle at a 1 C rate. This work will be a steppingstone for the AM/CB/B composite electrodes in TF‐LIBs.This article is protected by copyright. All rights reserved

Effect of Graphene on the Performance of Silicon–Carbon Composite Anode Materials for Lithium-Ion Batteries

“…However, the disadvantages of the Si anode are low electrical conductivity and large volume changes on cycling, which leads to fast capacity fading and a poor cycle life [6][7][8]. Many studies have reported techniques for preparing silicon/carbon (Si/C) composites with different graphite or carbon precursors, which is an effective approach to suppress the severe capacity degradation of pure Si [9][10][11][12]. While Si is dispersed into the carbonaceous matrix, the Si/C composite can buffer the large volume expansion of Si and improve its conductivity [13][14][15][16].…”