Analyses of CCD images of nucleon-silicon interaction events

Chugg, A.M.; Jones, R.; Moutrie, M.J.; Dyer, C. S.; Ryden, Keith; Truscott, P.R.; Armstrong, James R.; King, Donald B.

doi:10.1109/tns.2004.835113

Cited by 20 publications

(3 citation statements)

References 11 publications

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“…To adjust the simulation value to the experimental number of saturated pixels at 7x10 6 n/cm 2 , a collection efficiency of 40% is determined. Such efficiency is not unusual in image sensors [30]. The simulation results corrected with this collection efficiency factor are reported in Fig.…”

Section: Transient Radiation Effectsmentioning

confidence: 66%

Modeling Approach for the Prediction of Transient and Permanent Degradations of Image Sensors in Complex Radiation Environments

Raine

Goiffon²,

Girard

et al. 2013

IEEE Trans. Nucl. Sci.

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International audienceA modeling approach is proposed to predict the transient and permanent degradation of image sensors in complex radiation environments. The example of the OMEGA facility is used throughout the paper. A first Geant4 simulation allows the modeling of the radiation environment (particles, energies, timing) at various locations in the facility. The image sensor degradation is then calculated for this particular environment. The permanent degradation, i.e. dark current increase, is first calculated using an analytical model from the literature. Additional experimental validations of this model are also presented. The transient degradation, i.e. distribution of perturbed pixels, is finally simulated with Geant4 and validated in comparison with experimental data

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Section: Transient Radiation Effectsmentioning

confidence: 66%

Modeling Approach for the Prediction of Transient and Permanent Degradations of Image Sensors in Complex Radiation Environments

Raine

Goiffon²,

Girard

et al. 2013

IEEE Trans. Nucl. Sci.

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show abstract

“…As most solid-state devices, Charged Coupled Devices (CCDs) are known to be very sensitive to natural or artificial sources of radiation [1][2]. Depending on the context of use of such devices, this extreme sensitivity is an advantage if one tries to detect radiation [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] or a disadvantage if we try to avoid them [18]. Indeed, the interactions of single ionizing particles with the CCD materials generate electron-hole pairs that can be partially or totally collected at silicon (i.e.…”

Section: Introductionmentioning

confidence: 99%

Natural radiation events in CCD imagers at ground level

Saoud

Moindjie

Munteanu

et al. 2016

Microelectronics Reliability

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International audienceIn Charged Coupled Devices (CCDs), radiation-induced events generate electron hole pairs in silicon that cause artifacts and contribute to degrade image quality. In this work, the impact of natural radiation at ground level has been characterized at sea level, in altitude and underground for a commercial full-frame CCD device. Results have been carefully analyzed in terms of event shape, size and hourly rates. The respective contributions of atmospheric radiation and telluric contamination from ultra-traces of alpha-particle emitters have been successfully separated and quantified. Experimental results have been compared with simulation results obtained from a dedicated radiation transport and interaction code. Highlights: • Image artifacts induced by natural radiation in CCD images are investigated • Radiation-induced events are analyzed in terms of pixel size and hourly rates • Numerical simulations give the contributions of the different particles to the event rate

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“…The flat-band voltage shifts, the dark signal, the dark signal spike, and the CTI have been studied on a two phase CCD used as vertex detector subjected to irradiation with fluences reaching 8.9 Â 10 9 n/cm 2 [9]. The interactions of high energy neutrons with CCDs and single particle displacement damage in the CCDs have been presented in [10,11].…”

Section: Introductionmentioning

confidence: 99%