Analysis and Compact Modeling of Drain-Extended FinFET

Kumar, Vikash; Dabhi, Chetan Kumar; Parihar, Shivendra Singh; Chauhan, Yogesh Singh

doi:10.1109/mos-ak.2019.8902458

Cited by 4 publications

(1 citation statement)

References 17 publications

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“…Generally, the source/drain contact region is highly doped so that no performance degradation occurs, namely a high conductivity is used to increase the current [1]. However, for thin-layer MOSFET generations, the contact-resistance effect is very much enhanced [2], [15]- [18]. In this context, it has further been demonstrated that a small reduction of the drain-doping concentration can suppress the short-channel effects quite drastically, while causing a small increase in the drainresistance effect and in the power loss at the same time.…”

Section: Introductionmentioning

confidence: 99%

Compact Modeling of Multi-Gate MOSFETs for High-Power Applications

Herrera

Hirano

Miura-Mattausch

et al. 2020

IEEE J. Electron Devices Soc.

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A compact multi-gate MOSFET model is developed for high-voltage applications. The model includes the shortchannel effects specific for thin-film MOSFETs with highly resistive drain contact. The short-channel effects are drastically reduced by the drain-resistance effect, which is consistently modeled by considering the whole potential distribution along the device. The overlap length is an important device parameter, which influences on the device characteristics for high-voltage MOSFETs in general. Modeling of the related effects is realized self-consistently for the reported compact high-voltage multi-gate MOSFET model, based on the applied complete potentialdistribution description. In particular, the modeling requirements for capturing the specific features of the capacitance response are explored in detail. It is further demonstrated that the developed model is applicable even for limiting the device-size requirements during the development of a multi-gate MOSFET generation.

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