2022
DOI: 10.1109/tcsii.2022.3180549
|View full text |Cite
|
Sign up to set email alerts
|

Analysis and Comparison of Marchand and Transformer Baluns Applied in GaAs

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
3
2

Relationship

0
5

Authors

Journals

citations
Cited by 13 publications
(2 citation statements)
references
References 20 publications
0
2
0
Order By: Relevance
“…15 Chakraborty et al studied and compared the performances of Marchand and transformer baluns based on GaAs technology. 16 Moreover, Zhu and G omez-García utilized parasitic capacitance inside three-dimensional (3D) inductor to design a passband filter based on 130 nm CMOS technology. 17 The filter in Zhu and G omez-García 17 achieved both broadband and excellent out-of-band suppression characteristics.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…15 Chakraborty et al studied and compared the performances of Marchand and transformer baluns based on GaAs technology. 16 Moreover, Zhu and G omez-García utilized parasitic capacitance inside three-dimensional (3D) inductor to design a passband filter based on 130 nm CMOS technology. 17 The filter in Zhu and G omez-García 17 achieved both broadband and excellent out-of-band suppression characteristics.…”
Section: Introductionmentioning
confidence: 99%
“…With the progress in semiconductor technologies, a high performance transformer balun is made with very low magnitude imbalance and phase imbalance using 0.13 μm SiGe technology 15 . Chakraborty et al studied and compared the performances of Marchand and transformer baluns based on GaAs technology 16 . Moreover, Zhu and Gómez‐García utilized parasitic capacitance inside three‐dimensional (3D) inductor to design a passband filter based on 130 nm CMOS technology 17 .…”
Section: Introductionmentioning
confidence: 99%