Analysis and design of a 3&amp;#x2013;26 GHz low-noise amplifier in SiGe HBT technology

Saha, Prabir; Shankar, Subramaniam; Schmid, Rob; Mills, Richie; Cressler, John D.

doi:10.1109/rws.2012.6175372

Cited by 11 publications

(5 citation statements)

References 9 publications

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“…The differential SiGe amplifier presented in [12] is a more wideband design but it results in a considerably higher NF (≥20 dB), occupies a larger die area and dissipates more DC power. The experimental results of the proposed differential (IF) amplifier design compare favourably also with some earlier reported single‐ended silicon based wideband amplifier designs [13–18] in terms of achieving a higher/similar peak gain or more wideband input/output matching. The presented differential SiGe amplifier has typically 1–2 dB higher in‐band NF than those single‐ended designs.…”

Section: Summary Of Resultssupporting

confidence: 69%

“…The experimental results of the proposed differential (IF) amplifier design compare favourably also with some earlier reported single-ended silicon based wideband amplifier designs [13][14][15][16][17][18] in terms of achieving a higher/similar peak gain or more wideband input/output matching. The presented differential SiGe amplifier has typically 1-2 dB higher in-band NF than those single-ended designs.…”

Section: Wwwietdlorgsupporting

confidence: 69%

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SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

Reyaz

Malmqvist

Gustafsson

et al. 2015

IET Microwaves, Antennas & Propagation

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This study presents the results of a high-gain and wideband differential intermediate frequency (IF) amplifier circuit design for a W-band passive imaging single-chip (down-conversion) receiver front-end. The cascaded two-stage IF amplifier was fabricated in a 0.13 μm SiGe BiCMOS process technology with 300 GHz/500 GHz f T /f max . In total six on-chip inductors are used in the input, output and inter-stage matching networks which enable relatively broadband RF properties together with a compact circuit size for the IF amplifier (the die area is 0.27 mm 2 incl. RF and DC pads). The broadband SiGe amplifier has a measured gain of 10-19.5 dB at 2-37 GHz (|s 11 | and |s 22 | ≤ −10 dB at 7-40 GHz and 8-35 GHz, respectively), noise figure of 6.3-8.0 dB at 2-26 GHz and output third order intercept points of 7-17 dBm at 1-40 GHz (the DC power consumption is 122 mW). To the authors' best knowledge, this work reports a first-time realisation of a differential IF amplifier made in a 0.13 μm SiGe BiCMOS technology that achieves such wideband impedance matching together with a high gain and reasonably low noise properties over a wide instantaneous bandwidth (|s 21 | = 15-19.5 dB at 3-26 GHz).

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Section: Summary Of Resultssupporting

confidence: 69%

Section: Wwwietdlorgsupporting

confidence: 69%

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

Reyaz

Malmqvist

Gustafsson

et al. 2015

IET Microwaves, Antennas & Propagation

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“…Relatively few results have been reported on SiGe BiCMOS high-gain (low-noise) amplifier circuits with a wideband impedance matching (below -10 dB) in the 5-30 GHz range. Table II compares the results of the two SiGe wideband amplifier designs presented in this paper (made in 0.25/0.13 μm technologies) with two previously reported lownoise amplifiers made in 0.13 μm SiGe processes [6][7]. The 3-26 GHz amplifier design in [6] showed 9 dB of gain (NF<4.5 dB at 2-14 GHz).…”

Section: Summary Of Resultsmentioning

confidence: 81%

“…Table II compares the results of the two SiGe wideband amplifier designs presented in this paper (made in 0.25/0.13 μm technologies) with two previously reported lownoise amplifiers made in 0.13 μm SiGe processes [6][7]. The 3-26 GHz amplifier design in [6] showed 9 dB of gain (NF<4.5 dB at 2-14 GHz). A somewhat higher gain (and also higher NF) was obtained with a SiGe wideband (8-18 GHz) amplifier [7].…”

Section: Summary Of Resultsmentioning

confidence: 81%

SiGe wideband power detector and IF-amplifier RFICs for W-band passive imaging systems

Jönsson

Samuelsson

Reyaz

et al. 2013

CAS 2013 (International Semiconductor Conference)

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This paper presents the results of some W-band power detector and wideband (IF) amplifier circuit designs made in 0.25 μm and 0.13 μm SiGe BiCMOS processes. Two 0.25 μm SiGe wideband power detector and amplifier RFICs present an NEP =1-2 pW/Hz 1/2 at 85-101 GHz and s 21 =10-19 dB at 2-32 GHz, respectively. To the authors' knowledge, the proposed SiGe detector design reports the widest s 11 bandwidth (s 11 ≤-10 dB 84-104 GHz) among SiGe based W-band detectors. Two 0.13 μm SiGe detector/amplifier circuits show a simulated NEP=0.2-0.9 pW/Hz 1/2 at 75-100 GHz and s 21 = 19-21 dB at 5-30 GHz. The presented SiGe power detectors and (IF) amplifiers are targeting broadband applications such as passive imaging.

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“…Frequency tuning technology uses switches and tuning inductance to configure the operating frequencies of multiple narrowband LNAs, providing simultaneous input matching and output load reconfiguration 10,11 . Broadband matching technology uses a multi-stage RLC resonance network to achieve broadband matching 12,13 .…”

Section: Introductionmentioning

confidence: 99%

Design of compact wideband millimeter-wave low noise amplifier

Wang,

Li,

et al. 2023

Fourth International Conference on Computer Science and Communication Technology (ICCSCT 2023)

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In this paper, an ultra-wideband Ka-band low-noise amplifier (LNA) is presented using broadband transformer matching and gate-drain feedback technology. The proposed LNA achieves ultra-wideband while maintaining the high integration and low power consumption of traditional source-degenerated LNAs. Additionally, cascading technology is used to increase the peak gain. The proposed LNA is implemented in a 55 nm CMOS process. The simulation results show that the LNA achieves a stable gain response in the frequency band of 21.7-36.5 GHz, and the peak power gain is 20.8 dB. The minimum noise figure is 4.4 dB. The DC power consumption is 15 mW with a compact chip area of 0.33 mm² .

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Analysis and design of a 3–26 GHz low-noise amplifier in SiGe HBT technology

Cited by 11 publications

References 9 publications

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers

SiGe wideband power detector and IF-amplifier RFICs for W-band passive imaging systems

Design of compact wideband millimeter-wave low noise amplifier

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