2019
DOI: 10.3390/electronics8030365
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Analysis and Experimental Test of Electrical Characteristics on Bonding Wire

Abstract: In this paper, electrical characteristic analysis and corresponding experimental tests on gold bonding wire are presented. Firstly, according to EIA (Electronic Industries Association)/JEDEC97 standards, this paper establishes the electromagnetic structure model of gold bonding wire. The parameters, including flat length ratio, diameter, span and bonding height, were analyzed. In addition, the influence of three kinds of loops of bonding wire is discussed in relation to the S parameters. An equivalent circuit … Show more

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Cited by 16 publications
(8 citation statements)
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“…The measured S 11 values are higher than the simulated ones. This may be due to soldering or fabrication tolerances [24]. The measured S 11 values range from −15 dB to −21 dB which falls under a generous range for a radiating patch antenna, according to various literatures [3,14,19].…”
Section: Resultsmentioning
confidence: 82%
“…The measured S 11 values are higher than the simulated ones. This may be due to soldering or fabrication tolerances [24]. The measured S 11 values range from −15 dB to −21 dB which falls under a generous range for a radiating patch antenna, according to various literatures [3,14,19].…”
Section: Resultsmentioning
confidence: 82%
“…In [25], an energy verification method for the nozzle of the SC200 proton therapy facility is proposed to ensure safe redundancy of treatment. In [26], electrical characteristic analysis and corresponding experimental tests on gold bonding wire are presented. Firstly, according to EIA (Electronic Industries Association)/JEDEC97 standards, this paper establishes the electromagnetic structure model of gold bonding wire.…”
Section: The Present Issuementioning
confidence: 99%
“…Growing demand for emerging technology such as 5G, IoT, VR, cloud computing and metaverse has motivated the microelectronic industries to pursue device integration and advanced packaging technology because it enables devices with far higher interconnect density, higher power and smaller form factors which are ideal for the application of the complex functions [ 1 , 2 ]. The concerns are mostly related to the failure of the solder joint under high current stress.…”
Section: Introductionmentioning
confidence: 99%