Analysis and experimental waveform study on inverse class class-F mode of microwave power FETs

Wei, Chang; DiCarlo, P.; Tkachenko, Y.A.; McMorrow, R.; Bartle, D.

doi:10.1109/mwsym.2000.861106

Cited by 36 publications

(17 citation statements)

References 5 publications

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“…The harmonic impedances available at drains in the distributed active transformer described in Section III-A allow the DAT to operate in several different classes including A, AB, B, C, E, inverse F [16], [17], and E/F . A DAT power amplifier can operate in one or more classes of operation depending on the gate bias level, drive level, and drain tuning.…”

Section: Modes Of Operation In Distributed Active Transformer Powmentioning

confidence: 99%

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Fully integrated CMOS power amplifier design using the distributed active-transformer architecture

Aoki

Kee

Rutledge

et al. 2002

IEEE J. Solid-State Circuits

333

128

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Abstract-A novel on-chip impedance matching and powercombining method, the distributed active transformer is presented. It combines several low-voltage push-pull amplifiers efficiently with their outputs in series to produce a larger output power while maintaining a 50-match. It also uses virtual ac grounds and magnetic couplings extensively to eliminate the need for any offchip component, such as tuned bonding wires or external inductors. Furthermore, it desensitizes the operation of the amplifier to the inductance of bonding wires making the design more reproducible. To demonstrate the feasibility of this concept, a 2.4-GHz 2-W 2-V truly fully integrated power amplifier with 50-input and output matching has been fabricated using 0.35-m CMOS transistors. It achieves a power added efficiency (PAE) of 41% at this power level. It can also produce 450 mW using a 1-V supply. Harmonic suppression is 64 dBc or better. This new topology makes possible a truly fully integrated watt-level gigahertz range low-voltage CMOS power amplifier for the first time.

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Section: Modes Of Operation In Distributed Active Transformer Powmentioning

confidence: 99%

“…In this amplifier, the impedance seen by the transistor drain is the same as that of the class inverse F [16], [17] at every odd harmonic frequency and the same as that of class E for the fundamental and the even harmonics.…”

Section: Class E/f Operationmentioning

confidence: 99%

Fully integrated CMOS power amplifier design using the distributed active-transformer architecture

Aoki

Kee

Rutledge

et al. 2002

IEEE J. Solid-State Circuits

333

128

View full text Add to dashboard Cite

show abstract

“…We have simulated the two designed amplifiers and probed As expected, the class-F amplifier has third-order voltage peaking with third-order load impedance of 252.26 and second-order current peaking with second-order load impedance of 1.05 , while the inverse class-F amplifier has second-order voltage peaking with second-order load impedance of 419. 5 and third-order current peaking with third-order load impedance of 3.00 , as shown in Fig. 4.…”

Section: Design and Experiments For The Verificationmentioning

confidence: 93%

Analysis and experiments for high-efficiency class-F and inverse class-F power amplifiers

Woo

Yang

Kim

2006

IEEE Trans. Microwave Theory Techn.

214

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Abstract-This paper presents analytic and experimental comparisons for high-efficiency class-F and inverse class-F amplifiers. The analytic formula of the efficiencies, output powers, dc power dissipations, and fundamental load impedances of both amplifiers are derived from the ideal current and voltage waveforms. Based on the formula, the performances are compared with a reasonable condition: fundamental output power levels of class-F and inverse class-F amplifiers are conditioned to be identical. The results show that the inverse class-F amplifier has better efficiency than that of class-F amplifiers as the on-resistance of the transistor increases.For experimental comparison, we have designed and implemented the class-F and inverse class-F amplifiers at 1-GHz band using a GaAs MESFET and analyzed the measured performances. Experimental results shows 10% higher power-added efficiency of the inverse class-F amplifier than that of the class-F amplifier, which verifies the waveform analysis.

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“…This has the effect of interchanging the voltage and current waveforms so that, as the number of tuned harmonics increases, the voltage waveform increasingly resembles a half-sinusoid and the current waveform increasingly resembles a square wave. Several recent studies suggest that class compares favorably to class F [10], [11], although the efficiency limits imposed by the waveforms are the same [17]. Example waveforms for a classamplifier are shown in Fig.…”

Section: B Class F and Classmentioning

confidence: 99%

The class-E/F family of ZVS switching amplifiers

Kee

Aoki²,

Hajimiri

et al. 2003

IEEE Trans. Microwave Theory Techn.

240

138

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Abstract-A new family of switching amplifiers, each member having some of the features of both class E and inverse F, is introduced. These class-E/F amplifiers have class-E features such as incorporation of the transistor parasitic capacitance into the circuit, exact truly switching time-domain solutions, and allowance for zero-voltage-switching operation. Additionally, some number of harmonics may be tuned in the fashion of inverse class F in order to achieve more desirable voltage and current waveforms for improved performance. Operational waveforms for several implementations are presented, and efficiency estimates are compared to class-E.

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Analysis and experimental waveform study on inverse class class-F mode of microwave power FETs

Cited by 36 publications

References 5 publications

Fully integrated CMOS power amplifier design using the distributed active-transformer architecture

Fully integrated CMOS power amplifier design using the distributed active-transformer architecture

Analysis and experiments for high-efficiency class-F and inverse class-F power amplifiers

The class-E/F family of ZVS switching amplifiers

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