Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers

Zheng, Zhiyuan; Chen, Zimin; Chen, Yingda; Huang, Shanjin; Fan, Bingfeng; Xian, Yulun; Jia, Weiqing; Wu, Zhisheng; Wang, Gang; Jiang, Hao

doi:10.1063/1.4720395

Cited by 7 publications

(3 citation statements)

References 11 publications

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“…Materials such as ZnO with a high transmittivity % may provide a better way to use thick TCL while maintaining a low light absorption [31]. Further increasing the electrical conductivity of the nitride materials (p-GaN and n-GaN) in the MOCVD epitaxial level, such as using the delta-doping technique [32], [33], can also increase the and the capability of current spreading of LEDs. Besides, one rule in designing the LED structures is that the actual spreading distance of current should not be larger than the effective CS length .…”

Section: Methodsmentioning

confidence: 98%

Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes

Huang

Fan

Chen

et al. 2013

J. Display Technol.

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The lateral current spreading (CS) effect on the efficiency droop in GaN-based LEDs has been studied in terms of the CS distance using a designed pattern with the 2-D current spreading profile. The correlations of CS effect with the electrical, luminescent and electric-thermal properties of the LEDs have been discussed. LEDs with the longer than the theoretically calculated effective CS length suffer from more serious efficiency droop and the degradation of luminescent properties. However, the influence of CS effect on the ideality factors of LEDs is not obvious. Higher chip temperature caused by poor CS was observed and may further enlarge the efficiency droop.

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Section: Methodsmentioning

confidence: 98%

Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes

Huang

Fan

Chen

et al. 2013

J. Display Technol.

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“…At the beginning of each period, there was a 5 s purging time where neither SiH 4 nor TMGa was flown into the reactor. Previously, the SiH 4 delta doping method has been applied to the III-polar n-GaN growth but not yet for the N-polar n-GaN growth. − Thus, the n-GaN layers in Series II essentially comprise the periodic superlattice comprising unintentionally doped u-GaN and SiN x layers. Each period corresponded to a 20 nm thickness for Series II.…”

Section: Experimental Methodsmentioning

confidence: 99%

Demonstration of N-Polar III-Nitride Tunnel Junction LED

Zhang

Deng

et al. 2020

ACS Photonics

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In this study, we have demonstrated the N-polar III-nitride tunnel junction (TJ) light-emitting diode (LED). The LED was grown on the N-polar GaN template on sapphire substrates by metalorganic vapor phase epitaxy. The growth started with the n-GaN cladding layer whose doping condition was optimized by the periodic doping method and then the InGaN/GaN quantum well active region. Subsequently, the TJ was grown comprising a graded p-AlGaN layer, a thin undoped Al 0.4 Ga 0.6 N interlayer, and the topmost n-GaN layer. The I-V measurement show that the device resistance of the TJ LED was significantly reduced compared to the reference LED without the TJ due to enhanced hole injection. The electroluminescence measurement manifested that the emission and the external quantum efficiency of the TJ LED were greatly enhanced by ~70% compared with the reference LED. This work demonstrates that the TJ devices can be realized amid N-polarity that is promising for high-performance devices operating at various wavelength.

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“…This was attributed to the reduction of tensile stress. Several works have been done for examining the surface morphology, dislocation density, and electrical properties of crystalline GaN/Si δ-doping GaN layers on either sapphire [ 21 , 22 ] or silicon substrates [ 23 ]. Unfortunately, few of them directly investigated the luminescence properties of InGaN/GaN MQW structures on top of a Si δ-doping GaN layer and clarified the relationship between luminescence efficiency enhancement and strain release caused by the film structure improvements, which are critical to the device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

et al. 2018

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This paper reports the photoluminescence (PL) properties of InGaN/GaN multiple quantum well (MQW) light-emitting diodes grown on silicon substrates which were designed with different tensile stress controlling architecture like periodic Si δ-doping to the n-type GaN layer or inserting InGaN/AlGaN layer for investigating the strain-controlled recombination mechanism in the system. PL results turned out that tensile stress released samples had better PL performances as their external quantum efficiencies increased to 17%, 7 times larger than the one of regular sample. Detail analysis confirmed they had smaller nonradiative recombination rates ((2.5~2.8)×10−2 s−1 compared to (3.6~4.7)× 10−2 s−1), which was associated with the better crystalline quality and absence of dislocations or cracks. Furthermore, their radiative recombination rates were found more stable and were much higher ((5.7~5.8) ×10−3 s−1 compared to [9~7] ×10−4 s−1) at room temperature. This was ascribed to the suppression of shallow localized states on MQW interfaces, leaving the deep radiative localization centers inside InGaN layers dominating the radiative recombination.

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Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers

Abstract: N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

Cited by 7 publications

References 11 publications

Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes

Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes

Demonstration of N-Polar III-Nitride Tunnel Junction LED

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

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