Analysis and modeling of the semi-floating transistor based 1T pixel in CMOS image sensors

Gao, Jing; Li, Yi; Gao, Zhiyuan; Shi, Zaifeng

doi:10.1016/j.mejo.2017.09.002

Cited by 3 publications

(1 citation statement)

References 13 publications

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“…Meanwhile, the active pixel image sensor based on semifloating gate transistor (SFGT-APS) has been proposed 11,12) and investigated. [13][14][15][16][17] It has a higher fill factor and a higher pixel density with a simple 1T active pixel structure and can realize the functions of the conventional 3T CMOS image sensor. 18,19) However, due to the shallow junction of photodiodes, the quantum efficiency (QE) and sensitivity are too poor to meet low illumination intensity and high-speed application.…”

Section: Introductionmentioning

confidence: 99%

1T semi-floating gate image sensor with enhanced quantum efficiency and high response speed

Tian

Yue

Chen

et al. 2020

Jpn. J. Appl. Phys.

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The active pixel image sensor based on a semi-floating gate transistor (SFGT-APS) has been proposed and investigated; however, the quantum efficiency (QE) and the sensitivity are too poor to meet low illumination intensity and high-speed application due to the shallow junction of photodiodes. In this work, we demonstrate a new structure, called buried photodiode semi-floating gate transistor active pixel image sensor (BSFGT-APS), which possesses enhanced QE, high sensitivity, and fast response speed. Moreover, BSFGT-APS has the same fill factor with SFGT-APS, which is 55% with a 1 μm2 photodiode in 0.13 μm process. The basic device characteristics were investigated by Sentaurus TCAD simulation, including potential of photodiode, transient response, dark current, conversion gain, and full well capacity.

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