Analysis and prospect of local variability of drain current in scaled MOSFETs by a new decomposition method

Abstract

Causes of drain current local variability are analyzed by decomposing into current variability components. Besides V TH and G m components, it is newly found that effects of "current onset" variability caused by channel potential fluctuations largely contribute to the current variability and that G m component is relatively small in the saturation region. It is shown that both V TH and current onset components decreases with reducing channel dopants, indicating that intrinsic channel is very effective to reduce current variability. (Keywords: Current variability, V TH , current onset, and G m ) 978-1-4244-7641-1/10/$26.00 ©2010 IEEE

Understanding variability in complementary metal oxide semiconductor (CMOS) devices manufactured using silicon-on-insulator (SOI) technology

“…9 Experiments without source/drain commutation, done on very large ensembles of specially designed transistor arrays with circuits that allow individual transistors to be accessed are also possible. 10 Special care must be taken to minimize systematic variations (i.e., mature technology and a special layout are used) in such studies. 11 Regardless of the measurement approach, experimental observations refl ect the simultaneous impact of all sources of statistical variability.…”

Statistical advantages of intrinsic channel fully depleted SOI MOSFETs over bulk MOSFETs

“…COV is defined by the difference between extrapolated Vth (Vthex) and subthreshold constant current Vth (Vthc) (COV = Vthex -Vthc) [7,8]. COV variability is compared in Fig.…”

“…It is also found that the variability of "current-onset voltage (COV)" [7], which affects drain current variability, is caused by channel potential fluctuations due to RDF [8]. On the other hand, random telegraph noise (RTN) is another issue of the fluctuation of transistor characteristics [9], and the suppression of the RTN effect is essential for future scaled MOSFETs.…”

Comprehensive analysis of I<inf>on</inf> variation in metal gate FinFETs for 20nm and beyond

“…However, I on variability (ΔI on ) has never been investigated for the FinFETs even though it directly determines the circuit performance. In addition to the ΔV t as the dominant source of ΔI on , significance of G m variation (ΔG m ) increases for the FinFET because the recent work on scaled bulk planar MOSFETs reveals that ΔG m is not suppressed by the RDF reduction [3]. The fluctuation of R para (ΔR para ) in the FinFET is a significant I on variation source too [4].…”