Analysis and simulation of spiral inductor fabricated on silicon substrate

Yoshitomi, Sadayuki

doi:10.1109/icecs.2004.1399694

Cited by 5 publications

(4 citation statements)

References 7 publications

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“…The measured s-parameters were converted into yparameters, and they were then de-embedded using an open pattern. The inductance, series resistance, and Q factor were extracted from y 11 [22].…”

Section: Resultsmentioning

confidence: 99%

A Study of Striped Inductor for K- and Ka-Band Voltage-Controlled Oscillators

Tsuji

Itano

Morishita

et al. 2016

IEICE Trans. Electron.

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SUMMARYA striped inductor and its utilization of a voltagecontrolled oscillator (VCO) are studied with the aim of suppressing phase noise degradation in K-and Ka-bands. The proposed striped inductor exhibits reduced series resistance in the high frequency region by increasing the cross-sectional peripheral length, as with the Litz wire, and the VCO of the striped inductor simultaneously exhibits a lower phase noise than that of the conventional inductor. Striped and conventional inductors and VCOs are designed and fabricated, and their use of K-and Ka-bands is measured. Results show that the Q factor and corner frequency of the striped inductor are approximately 1.3 and 1.6 times higher, respectively, than that of the conventional inductor. Moreover, the 1-MHz-offset phase noise of the striped inductor's VCO in the K-and Ka-bands was approximately 3.5 dB lower than that of the conventional inductor. In this study, a 65-nm standard CMOS process was used. key words: skin effect, striped inductor, Q factor, corner frequency, voltage-controlled oscillator, phase noise

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Section: Resultsmentioning

confidence: 99%

A Study of Striped Inductor for K- and Ka-Band Voltage-Controlled Oscillators

Tsuji

Itano

Morishita

et al. 2016

IEICE Trans. Electron.

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“…The mutual inductances in a multi-port inductor influence each other. Hence it is not easy to characterize the on-chip Inductor without considering the eddy currents and the losses that occur due to the Si substrate [5]. Compared to the conventional inductors, the symmetric multi-port Inductor utilizes a lesser area and can provide better inductance density and higher Q values at higher frequencies.…”

Section: Introductionmentioning

confidence: 99%

Design analysis of a multi-port 8-shaped inductor for RF applications

Somraj,

Kumar

2023

Eng. Res. Express

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Portable wireless devices with a high-frequency range should also function with low voltage, providing low power dissipation and noise. Design engineers cannot successfully meet the above design objectives without using RF inductors. Since integrated inductors are an essential part of RF circuits, these devices are highlighted because of their enormous size in the circuit layout and unsettling radiations. As a result, there is a solid motivation to design, optimize, and model inductors made on Si substrates. This article presents the design of a multi-path multi-port 8-shaped inductor with dimensions of 150×150 µm, simulated using Cadence EMX simulator to analyze its Q-factor and inductance. The analysis provided that the simulated inductance has the highest value of 12.2nH, which is the maximum value across all the conclusions of this research. Another significant discovery was that this Inductor is suitable for up to 45GHz. To achieve an improved frequency of operation for the multi-path, multi-port 8-shaped Inductor, an analysis of the Inductor's topology is conducted, focusing on enhancing the loop widths of metal layers and optimizing spacing between the metal tracks.

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“…With a high aspect ratio (HAR), defined as >1 two advantages are obvious: first, HAR increases the conductor crosssectional area, which reduces the coil resistance-essential for signal detecting to reduce thermal noise and second this reduces the area occupied by the coil on the substrate and hence helps in miniaturization. From existing literature reports, it can be seen [3][4][5][6] that coils are achieved on top (not embedded) of Si substrate with thin sputtered metal layers whereas similar planar coils are achieved on the surface of GaAs substrates in Refs. 7-9 and on glass substrates in Ref.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of silicon-embedded low resistance high-aspect ratio planar copper microcoils

Mohammed

Puiu

Aditya

2018

J. Micro/Nanolith. MEMS MOEMS

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Low resistance is an important requirement for microcoils which act as a signal receiver to ensure low thermal noise during signal detection. High-aspect ratio (HAR) planar microcoils entrenched in blind silicon trenches have features that make them more attractive than their traditional counterparts employing electroplating through a patterned thick polymer or achieved through silicon vias. However, challenges met in fabrication of such coils have not been discussed in detail until now. This paper reports the realization of such HAR microcoils embedded in Si blind trenches, fabricated with a single lithography step by first etching blind trenches in the silicon substrate with an aspect ratio of almost 3∶1 and then filling them up using copper electroplating. The electroplating was followed by chemical wet etching as a faster way of removing excess copper than traditional chemical mechanical polishing. Electrical resistance was further reduced by annealing the microcoils. The process steps and challenges faced in the realization of such structures are reported here followed by their electrical characterization. The obtained electrical resistances are then compared with those of other similar microcoils embedded in blind vias.

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Analysis and simulation of spiral inductor fabricated on silicon substrate

Cited by 5 publications

References 7 publications

A Study of Striped Inductor for K- and Ka-Band Voltage-Controlled Oscillators

A Study of Striped Inductor for K- and Ka-Band Voltage-Controlled Oscillators

Design analysis of a multi-port 8-shaped inductor for RF applications

Fabrication of silicon-embedded low resistance high-aspect ratio planar copper microcoils

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