Raman scattering (RS) experiments have been performed for simultaneous determination of Mn composition and strain in Ga 1-x Mn x Sb thin films grown on GaSb substrate by liquid phase epitaxy technique. The Raman spectra obtained from various Ga 1-x Mn x Sb samples show only GaSb-like phonon modes whose frequency positions are found to have Mn compositional dependence. With the combination of epilayer strain model, RS and energy dispersive x-ray (EDX) experiments, the compositional dependence of GaSb-like LO phonon frequency is proposed both in strained and unstrained conditions. The proposed relationships are used to evaluate Mn composition and strain from the Ga 1-x Mn x Sb samples. The results obtained from the RS data are found to be in good agreement with those determined independently by the EDX analysis. Furthermore, the frequency positions of MnSb-like phonon modes are suggested by reduced-mass model.