Analysis of a Fully Matched Saturated Doherty Amplifier With Excellent Efficiency

Kim, Jangheon; Moon, Junghwan; Woo, Young Yun; Hong, Sungchul; Kim, Ildu; Kim, Jungjoon; Kim, Bumman

doi:10.1109/tmtt.2007.914361

Cited by 80 publications

(27 citation statements)

References 21 publications

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“…However, a transistor operated at this bias condition provides very high efficiency at the expense of poor linearity. Current wireless communication systems are required to have high linearity because of high data transfer rates; thus, the general approach is to employ a class-AB for the main amplifier and a class-C bias condition for the peaking amplifier [4,7].…”

Section: -1 Two-way Doherty Amplifiermentioning

confidence: 99%

“…A saturated Doherty amplifier can improve efficiency by controlling harmonic components and can be employed with the Doherty amplifier to provide further enhancement of efficiency [7]. For the ideal class-F operation with a half-sine drain current waveform and a rectangular voltage waveform, the harmonic control network should be short and open, for even and odd harmonics, respectively.…”

Section: -3 Class-f Amplifiermentioning

confidence: 99%

“…Although the ideal class-F power amplifier has 100 % efficiency when all of the harmonics are controlled, the proposed class-F harmonic control circuit treats only two harmonic components, the 2 nd and 3 rd , which are the main factors of harmonic control; this enables the amplifier to have high efficiency [7]. As shown in Fig.…”

Section: -3 Class-f Amplifiermentioning

confidence: 99%

See 2 more Smart Citations

GaN HEMT Based High Power and High Efficiency Doherty Amplifiers with Digital Pre-Distortion Correction for WiBro Applications

Park¹,

Kim²,

Yoo³

et al. 2011

Journal of electromagnetic engineering and science

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This paper presents high power and high efficiency Doherty amplifiers for 2.345 GHz wireless broadband (WiBro) applications that use a Nitronex 125-W (P3dB) GaN high electron mobility transistor (HEMT). Two-and three-way Doherty amplifiers and a saturated Doherty amplifier using Class-F circuitry are implemented. The measured result for a center frequency of 2.345 GHz shows that the two-way Doherty amplifier attains a high P3dB of 51.5 dBm, a gain of 12.5 dB, and a power-added efficiency (PAE) improvement of about 16 % compared to a single class AB amplifier at 6-dB back-off power region from P3dB. For a WiBro OFDMA signal, the Doherty amplifier provides an adjacent channel leakage ratio (ACLR) at 4.77 MHz offset that is -33 dBc at an output power of 42 dBm, which is a 9.5 dB back-off power region from P3dB. By employing a digital pre-distortion (DPD) technique, the ACLR of the Doherty amplifier is improved from -33 dBc to -48 dBc. The measured result for the same frequency shows that the three-way Doherty amplifier, which has a P3dB of 53.16 dBm and a gain of 10.3 dB, and the saturated Doherty amplifier, which has a P3dB of 51.1 dBm and a gain of 10.3 dB, provide a PAE improvement of 11 % at the 9-dB back-off power region and 7.5 % at the 6-dB back-off region, respectively, compared to the two-way Doherty amplifier.

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Section: -1 Two-way Doherty Amplifiermentioning

confidence: 99%

Section: -3 Class-f Amplifiermentioning

confidence: 99%

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GaN HEMT Based High Power and High Efficiency Doherty Amplifiers with Digital Pre-Distortion Correction for WiBro Applications

Park¹,

Kim²,

Yoo³

et al. 2011

Journal of electromagnetic engineering and science

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“…Comprehensive analyses have been done for Doherty power amplifiers starting from early 2000s [9,10,11,12,13]. The full load matching circuits is demonstrated by using offset lines at the output of the matching circuits for proper Doherty operation at both low and high power region [14].…”

Section: Introductionmentioning

confidence: 99%

Effect of input phase mismatch in Doherty power amplifiers

Aydın

Palamutcuogullari

Yarman

2016

IEICE Electron. Express

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In this paper, a new method is proposed to calculate transconductance ratio of the main and the peaking transistor of a Doherty power amplifier (DPA) which employs output matching circuits and offset lines. Cascade ABCD two-port parameters are used to analyze output section of the DPA. It is shown that output matching circuits has impact on the magnitude and the phase of the transconduction ratio. The effect of the input phase mismatch on the output power and efficiency is analyzed analytically. A 100 W dual drive Gallium Nitride (GaN) Doherty power amplifier is realized to experimentally verify the results. The drain efficiency measured as 68% at the correct phase, 65% for 30°input phase mismatch and 56% for 45°input phase mismatch.

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“…To improve efficiency, many kinds of Doherty power amplifiers have been designed to achieve high efficiency in a wide dynamic range [9][10][11][12]. Furthermore, as one of the most promising semiconductor technique, GaN HEMT has been used for recent power amplifier designs, and it is an ideal choice in order to meet the requirement of wide bandwidth of LTE-Advanced system [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Design of Linearity Improved Asymmetrical Gan Doherty Power Amplifier Using Composite Right/Left-Handed Transmission Lines

Feng¹,

Liu²,

Yu³

et al. 2013

PIER B

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Abstract-A highly efficient asymmetrical GaN Doherty power amplifier using traditional λ/4 transmission line and an asymmetrical GaN Doherty power amplifier (DPA) using composite right/lefthanded transmission lines (CRLH-TL) for linearity improvement are presented in this paper. The CRLH-TL is designed to suppress the second harmonic of the output of the carrier amplifier. This DPA using CRLH-TL is designed for 3.5 GHz LTE-Advanced Application with 100 MHz bandwidth and 37 dBm average output power, the carrier and peaking amplifiers are fabricated with the same 30 W GaN HEMT and unevenly driven in purpose of maintaining high efficiency at back-off power (BOP) region. At 9-dB and 6-dB BOP, the DE achieves 30% and 40.1%, respectively, and the adjacent channel power ratio (ACPR) are less than −37.1 dBc for 40 MHz 16 QAM signal at 37 dBm. In addition, the further linearization of the DPA is realized by using digital predistortion (DPD), the ACPRs are improved to −49.6 dBc for 40 MHz 16 QAM signal. The measured results show linearity improvement compared with the traditional DPA.

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Analysis of a Fully Matched Saturated Doherty Amplifier With Excellent Efficiency

Cited by 80 publications

References 21 publications

GaN HEMT Based High Power and High Efficiency Doherty Amplifiers with Digital Pre-Distortion Correction for WiBro Applications

GaN HEMT Based High Power and High Efficiency Doherty Amplifiers with Digital Pre-Distortion Correction for WiBro Applications

Effect of input phase mismatch in Doherty power amplifiers

Design of Linearity Improved Asymmetrical Gan Doherty Power Amplifier Using Composite Right/Left-Handed Transmission Lines

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