Copper
(Cu) incorporation is a key process for fabricating efficient
CdTe-based thin-film solar cells and has been used in CdTe-based solar
cell module manufacturing. Here, we investigate the effects of different
Cu precursors on the performance of CdTe-based thin-film solar cells
by incorporating Cu using a metallic Cu source (evaporated Cu) and
ionic Cu sources (solution-processed cuprous chloride (CuCl) and copper
chloride (CuCl2)). We find that ionic Cu precursors offer
much better control in Cu diffusion than the metallic Cu precursor,
producing better front junction quality, lower back-barrier heights,
and better bulk defect property. Finally, outperforming power conversion
efficiencies of 17.2 and 17.5% are obtained for devices with cadmium
sulfide and zinc magnesium oxide as the front window layers, respectively,
which are among the highest reported CdTe solar cells efficiencies.
Our results suggest that an ionic Cu precursor is preferred as the
dopant to fabricate efficient CdTe thin-film solar cells and modules.