Analysis of active matrix GaN-based HFET switch circuits integrated with GaN LED micro-displays

Shih, Ghien An; Huang, Jian

doi:10.1109/led.2005.857721

Cited by 3 publications

(1 citation statement)

References 10 publications

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“…Miniatured-LED display is promising for the next-generation technology due to the advantages of high contrast, fast response, low power consumption and long life-time [1]- [4]. However, the manufacturing difficulty is increasing with the reduction of LED size.…”

Section: Introductionmentioning

confidence: 99%

P‐4: ΔV_TH and V_SS IR rise Compensable PAM and PWM Combined Oxide TFTs Mini‐LED Pixel Circuit Working at Low Voltage

Shao,

Fu,

Liao

et al. 2023

Symp Digest of Tech Papers

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This paper presents a PAM and PWM combined Mini‐LED pixel circuit based on oxide TFTs. In the PAM part, a constant current (1mA) allows Mini‐LEDs work at peak efficiency and reduce power consumption. A source follower structure compensates for ΔVTH and VSS IR rise, which has only one TFT on current path, so that the pixel circuit works at low voltage. In the PWM part, a diode connected structure compensates for ΔVTH. Simulation results show that the current error rate is less than 0.81% when ΔVTH of PAM part is within ±3 V. When VSS rises less than 3 V, the current error rate is less than 7.22%. When ΔVTH of PWM part is +3 V, emission time variation is reduced by 99.29% compared with the circuit without compensation. The supply‐voltage can be reduced from 19.7 V to 15 V thanks to the proposed Mini‐LED pixel circuit.

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Section: Introductionmentioning

confidence: 99%

P‐4: ΔV_TH and V_SS IR rise Compensable PAM and PWM Combined Oxide TFTs Mini‐LED Pixel Circuit Working at Low Voltage

Shao,

Fu,

Liao

et al. 2023

Symp Digest of Tech Papers

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Micro‐Light Emitting Diode: From Chips to Applications

Parbrook

Corbett

Han

et al. 2021

Laser & Photonics Reviews

160

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Typical light‐emitting diodes (LEDs) have a form factor >(300 × 300) µm2. Such LEDs are commercially mature in illumination and ultralarge displays. However, recent LED research includes shrinking individual LED sizes from side lengths >300 µm to values <100 µm, leading to devices called micro‐LEDs. Their advent creates a number of exciting new application spaces. Here, a review of the principles and applications of micro‐LED technology is presented. In particular, the implications of reduced LED size in necessitating mitigation strategies for nonradiative device edge damage as well as the potential for higher drive current densities are discussed. The opportunities to integrate micro‐LEDs with electronics, and into large‐scale arrays, allow pixel addressable scalable integrated displays, while the small micro‐LED size is ideal for high‐speed modulation for visible light communication, and for integration into biological systems as part of optogenetic therapies.

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Pixel Circuit With P-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistor for Micro Light-Emitting Diode Displays Using Pulse Width Modulation

Kim

Lee

et al. 2021

IEEE Electron Device Lett.

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Analysis of active matrix GaN-based HFET switch circuits integrated with GaN LED micro-displays

Cited by 3 publications

References 10 publications

P‐4: ΔV_TH and V_SS IR rise Compensable PAM and PWM Combined Oxide TFTs Mini‐LED Pixel Circuit Working at Low Voltage

P‐4: ΔV_TH and V_SS IR rise Compensable PAM and PWM Combined Oxide TFTs Mini‐LED Pixel Circuit Working at Low Voltage

Micro‐Light Emitting Diode: From Chips to Applications

Pixel Circuit With P-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistor for Micro Light-Emitting Diode Displays Using Pulse Width Modulation

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Analysis of active matrix GaN-based HFET switch circuits integrated with GaN LED micro-displays

Cited by 3 publications

References 10 publications

P‐4: ΔVTH and VSS IR rise Compensable PAM and PWM Combined Oxide TFTs Mini‐LED Pixel Circuit Working at Low Voltage

P‐4: ΔVTH and VSS IR rise Compensable PAM and PWM Combined Oxide TFTs Mini‐LED Pixel Circuit Working at Low Voltage

Micro‐Light Emitting Diode: From Chips to Applications

Pixel Circuit With P-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistor for Micro Light-Emitting Diode Displays Using Pulse Width Modulation

Contact Info

Product

Resources

About

P‐4: ΔV_TH and V_SS IR rise Compensable PAM and PWM Combined Oxide TFTs Mini‐LED Pixel Circuit Working at Low Voltage

P‐4: ΔV_TH and V_SS IR rise Compensable PAM and PWM Combined Oxide TFTs Mini‐LED Pixel Circuit Working at Low Voltage