Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC

Jennings, Michael R.; Pérez‐Tomás, Amador; Davies, Mark W.; Walker, David; Zhu, Liang; Losee, Peter A.; Huang, W.; Balachandran, S.; Guy, Owen J.; Covington, James A.; Chow, T. P.; Mawby, P.A.

doi:10.1016/j.sse.2007.02.037

Cited by 39 publications

(21 citation statements)

References 14 publications

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“…The formation of these compounds at elevated temperature is also supported by the Ti-Al-SiC equilibrium phase diagram, 71 which predicts that four phases, SiC, Al 4 C 3 , Ti 3 SiC 2 , and liquid, can coexist in an equilibrium state when the aforementioned composition of TiAl alloy is adopted. Furthermore, the XRD results agree well with the experimental reports of Jennings et al 72 and Johnson and Capano, 29 but deviate somewhat from those of Nakatsuka et al, 28 which show that binary Al 3 Ti is present as well. This slight difference is mainly because the intensity of Al 3 Ti peak is so low that might be overlapped by the strong peaks of SiC and Ti 3 SiC 2 .…”

Section: B Identification Of Reaction Productssupporting

confidence: 84%

Ohmic contacts on silicon carbide: The first monolayer and its electronic effect

et al. 2009

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We demonstrate that origin of the long-standing contact issue in silicon carbide devices can be understood and technologically manipulated at the atomic level. Using advanced transmission electron microscopy, we attribute qualitatively the formation of ohmic contacts to silicon carbide to an epitaxial, coherent, and atomically ordered interface. Quantitatively, first-principles calculations predict that this interface can trap an atomic layer of carbon and hence enable lowered Schottky barrier and enhanced quantum electron transport. The combined experimental and theoretical studies performed provide insight into the complex electronic and electric effects of the buried contact interface, which are fundamental for improving the contact in future electronics based on wide-band-gap semiconductors such as silicon carbide and diamond.

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Section: B Identification Of Reaction Productssupporting

confidence: 84%

Ohmic contacts on silicon carbide: The first monolayer and its electronic effect

et al. 2009

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“…2. Sample details All fabrication steps [20] were done in clean room (class 1000) using metal-oxide-semiconductor (MOS) grade chemicals. 4H-SiC and 6H-SiC wafers (Si terminated) were provided by Cree Research Corporation.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes

Rebaoui

Bouiajra

Abid

et al. 2017

Microelectronic Engineering

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SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes, (2017), doi:10.1016/j.mee.2017 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT AbstractElectrical properties of ZnO/SiC Schottky diodes with two SiC polytypes and N and P doping are investigated. Characterization was performed through I-V and C-V-f measurements. Schottky barrier height (Φ b ), ideality factor (n), and series resistance (R s ) were extracted from forward I-V characteristics.(Φ b ), carrier's concentrations (N d -N a ) and (R s ) frequency dependence were extracted from C-V-f characteristics. The extracted n values suggest that current transport is dominated by interface generationrecombination and/or barrier tunneling mechanisms. When changing SiC polytypes, the rectifying ratio of ZnO/n-4HSiC is found to be twice that of ZnO/n-6HSiC. A change in doping nature gave a leakage current ratio of 40 between ZnO/p-4HSiC and ZnO/n-4HSiC. These results indicate that ZnO/p-4HSiC diodes have a complex current transport compared to diodes on n-type SiC. From I-V measurements, barrier height values are 0.63eV, 0.65eV and 0.71 eV for heterojunction grown on n-6HSiC, n-4HSiC and p-4HSiC, respectively. C-V measurements gave higher values indicating the importance of interface density of states. N ss values at 1MHz frequency are 4.54×10 11 eV -1 cm -2 , 3×10 12 eV -1 cm -2 and 8.13×1010 eV -1 cm -2 for ZnO/n-6HSiC, ZnO/n-4HSiC and ZnO/p-4HSiC, respectively. Results indicate the importance of SiC polytypes and its doping nature.

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“…metal silicides). Recent developments have improved the specific contact resistance to a level of approximately 5×10 −6 Ωcm 2 [29]- [31]. Reducing the contact resistance to this level or less will be necessary for the practical utilisation of SiC bipolar devices.…”

Section: A Materials Effectsmentioning

confidence: 99%

Physical modelling of large area 4H-SiC PiN diodes

Bryant

Jennings

Parker-Allotey

et al. 2009

2009 IEEE Energy Conversion Congress and Exposition

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The recent developments in SiC PiN diode research mean that physics-based models that allow accurate, rapid prediction of switching and conduction performance and resulting converter losses will soon be required. This is especially the case given the potential for very high voltage converters to be used for enabling distributed and renewable power generation. In this work an electro-thermal compact model of a 4.5 kV silicon carbide PiN diode has been developed for converter loss modelling in Simulink. Good matching of reverse recovery has been achieved between 25 and 200 • C. The I-V characteristics of the P+ anode contact have been shown to be significant in obtaining good matching for the forward characteristics of the diode, requiring further modelling work in this area.

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Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC

Cited by 39 publications

References 14 publications

Ohmic contacts on silicon carbide: The first monolayer and its electronic effect

Ohmic contacts on silicon carbide: The first monolayer and its electronic effect

SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes

Physical modelling of large area 4H-SiC PiN diodes

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