Analysis of bipolar amplification due to heavy-ion irradiation in 45 nm FDSOI MOSFET with thin BOX and ground plane

Pasupathy, K. R.; Bindu, B.

doi:10.1016/j.microrel.2019.04.018

Cited by 5 publications

(1 citation statement)

References 15 publications

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“…It is shown that the peak value of the SET current generated by the single particle at the position of high field strength and long particle trajectory is the largest [8,12]. As shown in Figure 6, when the incident position is selected as the drain to channel junction, the incident angle is 60 • oblique incidence and the device is in an off-state state; with an incident radius of 15 nm, the obtained SET current is the worst case.…”

Section: Set Current Extractionmentioning

confidence: 99%

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect

Yin,

Gao,

Wei

et al. 2023

Micromachines

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In this paper, the single event effect of 6T-SRAM is simulated at circuit level and device level based on a 22 nm fully depleted silicon-on-insulator (FDSOI) process, and the effects of charge sharing and bipolar amplification are considered in device-level simulation. The results demonstrate that, under the combined influence of these two effects, the circuit’s upset threshold and critical charge decreased by 15.4% and 23.5%, respectively. This indicates that the charge sharing effect exacerbates the single event effects. By analyzing the incident conditions of two different incident radius particles, it is concluded that the particles with a smaller incident radius have a worse impact on the SRAM circuit, and are more likely to cause the single event upset in the circuit, indicating that the ionization distribution generated by the incident particle affects the charge collection.

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Section: Set Current Extractionmentioning

confidence: 99%

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect

Yin,

Gao,

Wei

et al. 2023

Micromachines

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A physics-based analytical model for single-event transients in an InGaAs n-channel FinFET suitable for circuit simulations

Aneesh

Bindu²

2022

J Comput Electron

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Impact of Back-Gate Radiation on Single-Event Effects of Ultrathin Body and Buried Oxide Fully Depleted Silicon-on-Insulator MOSFETs

Wu,

Peng,

Liu

et al. 2023

J. Electron. Mater.

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Analysis of bipolar amplification due to heavy-ion irradiation in 45 nm FDSOI MOSFET with thin BOX and ground plane

Cited by 5 publications

References 15 publications

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect

A physics-based analytical model for single-event transients in an InGaAs n-channel FinFET suitable for circuit simulations

Impact of Back-Gate Radiation on Single-Event Effects of Ultrathin Body and Buried Oxide Fully Depleted Silicon-on-Insulator MOSFETs

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Analysis of bipolar amplification due to heavy-ion irradiation in 45 nm FDSOI MOSFET with thin BOX and ground plane

Cited by 5 publications

References 15 publications

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect

A physics-based analytical model for single-event transients in an InGaAs n-channel FinFET suitable for circuit simulations

Impact of Back-Gate Radiation on Single-Event Effects of Ultrathin Body and Buried Oxide Fully Depleted Silicon-on-Insulator MOSFETs

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Product

Resources

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Analysis of bipolar amplification due to heavy-ion irradiation in 45 nm FDSOI MOSFET with thin BOX and ground plane