Analysis of breakdown in ferromagnetic tunnel junctions

Oepts, W.; Verhagen, HJ; Coehoorn, R.; Jonge, W. J. M. de

doi:10.1063/1.371300

Cited by 59 publications

(33 citation statements)

References 28 publications

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“…7 However, in our case a reversible behavior of the switching was observed, which may be considered as a precursor of the soft breakdown. Additionally, we like to add that the dimension of the leakage sites (ϳ2 nm) is in excellent agreement with predictions by Oepts et al, 16 who estimated a diameter of a few nanometers from macroscopic breakdown experiments.…”

Section: Stm-induced Reversible Switching Of Local Conductivity In Thsupporting

confidence: 83%

STM-induced reversible switching of local conductivity in thinAl2O3films

et al. 2001

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Section: Stm-induced Reversible Switching Of Local Conductivity In Thsupporting

confidence: 83%

STM-induced reversible switching of local conductivity in thinAl2O3films

et al. 2001

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“…Intrinsic breakdown occurs in MTJs with well formed oxide layers due to the action of the applied electrical field. This leads to an abrupt decrease of the TJ-electrical resistance (and TMR) as a consequence of the formation of microscopic ohmic shorts in the barrier [4], [10]. On the other hand, extrinsic breakdown is related with the growth of existing pinholes in the tunnel barrier due to localized heating caused by high electrical current densities flowing along such pinholes [6].…”

mentioning

confidence: 99%

Dielectric Breakdown in Underoxidized Magnetic Tunnel Junctions: Dependence on Oxidation Time and Area

Ventura¹,

Ferreira

Sousa³

et al. 2006

IEEE Trans. Magn.

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Abstract-Magnetic tunnel junctions (MTJs) with partially oxidized 9 Å AlOx-barriers were recently shown to have the necessary characteristics to be used as magnetoresistive sensors in high-density storage devices. Here we study dielectric breakdown in such underoxidized magnetic tunnel junctions, focusing on its dependence on tunnel junction area and oxidation time. A clear relation between breakdown mechanism and junction area is observed for the MTJs with the highest studied oxidation time: samples with large areas fail usually due to extrinsic causes (characterized by a smooth resistance decrease at dielectric breakdown). Small area junctions fail mainly through an intrinsic mechanism (sharp resistance decrease at breakdown). However, this dependence changes for lower oxidation times, with extrinsic breakdown becoming dominant. In fact, in the extremely underoxidized magnetic tunnel junctions, failure is exclusively related with extrinsic causes, independently of MTJ-area. These results are related with the presence of defects in the barrier (weak spots that lead to intrinsic breakdown) and of metallic unoxidized Al nanoconstrictions (leading to extrinsic breakdown).

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“…In order to sense the resistance of the MTJ we must apply a voltage across it and allow current to pass through. For improved signal-to-noise ratios the applied voltage (and current) should be increased, but doing so will increase power consumption and bias voltages across the MTJ should be kept well below 1 V to insure long term reliability [122][123][124][125][126].…”

Section: Tunnel Insulator Reliabilitymentioning

confidence: 99%

Magnetic Random Access Memory for Embedded Computing

Donohoe¹

2007

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. MRAM_II_2007-Final SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S)Air Force Research Laboratory AFRL/RVSE Space Vehicles Directorate 3550 Aberdeen Ave. SE SPONSOR/MONITOR'S REPORTKirtland AFB, NM 87117-5776 NUMBER(S) AFRL-RV-PS-TR-2007-1196 DISTRIBUTION / AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. (Clearance #VS07-0688) SUPPLEMENTARY NOTESThis report is published in the interest of scientific and technical information exchange. The established procedures for editing reports were not followed for this technical report. ABSTRACTThe goal of this research was to develop an embedded magnetic memory technology to be integrated into Complementary Metal Oxide Semiconductor (CMOS) integrated circuit fabrication process to provide radiation-hard, logic elements and small random-access memories. The goal is not to provide largescale, bulk memory, but latches and flip flops that serve as state and data registers for sequential logic, and configuration registers for configurable logic. The benefits to spacecraft systems include the ability to power-down a subsystem while retaining system state, thus saving energy until the subsystem is required. The subsystem can then be powered-up and begin operating in milliseconds. The technology is based on a unique, PacMan-shaped magnetic tunneling junction (MTJ) cell developed at the University of Idaho. The focus of this research is to refine the PacMan cell to make it practical for integration into CMOS circuits, to develop CMOS circuits that employ the magnetic cells, and to integrate the cells onto a CMOS process. The process produced two circuit designs based on magnetic memory elements: a magnetic latch, and a magnetic shadow memory to serve as a backup to volatile electronic memory. ii University of Idaho report MRAM_II_2007-Final SUBJECT TERMS CMOS, MTJ Cell

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Analysis of breakdown in ferromagnetic tunnel junctions

Cited by 59 publications

References 28 publications

STM-induced reversible switching of local conductivity in thinAl2O3films

STM-induced reversible switching of local conductivity in thinAl2O3films

Dielectric Breakdown in Underoxidized Magnetic Tunnel Junctions: Dependence on Oxidation Time and Area

Magnetic Random Access Memory for Embedded Computing

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