Analysis of carrier recombination coefficients of 3C- and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC

Abstract

In recent years, 4H-SiC power devices have been widely employed in power electronic systems owing to their superior performance to Si power devices. However, stacking faults in 4H-SiC can degrade the device performance. Stacking faults can be considered as polytype inclusions in 4H-SiC. Carrier recombination in stacking faults is considered a cause for performance degradation. Understanding carrier recombination in different polytypes other than 4H-SiC can be helpful in understanding the mechanism of performance degradation due to stacking faults in 4H-SiC. Therefore, in this study, we characterized the recombination coefficients of 3C- and 6H-SiC and compared them with those of 4H-SiC using the time-resolved free-carrier absorption measurement method. Recombination at the stacking faults in 4H-SiC cannot be considered as the intrinsic recombination of inclusions of other polytypes.

Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions

“…© 2024 The Japan Society of Applied Physics lifetime in the bulk substrates. 49) Considering the reported radiative and Auger recombination coefficients (2 × 10 −12 cm 3 s −1 and 3 × 10 −31 cm 6 s −1 ), 47) we calculated contributions of the band-to-band and Auger recombination with the hole concentration of the sample with N Al of 3 × 18 cm −3 as shown in Figs. 2(a) and 2(b).…”

Analysis of defects dominating carrier recombination in CeO2 single crystal for photocatalytic applications

“…Therefore, it can also be concluded that defects directly dominate carrier recombination, which affects the material performance. Several measurements have been performed to observe the carrier recombination process [22,23]. Among these techniques, microwave photoconductivity decay (µ-PCD) and time-resolved photoluminescence (TR-PL) are the highly sensitive measurements used to observe the minority carrier recombination process when the charge carrier density is low [24].…”