Analysis of Commercial off-the-Shelf 1200 V Silicon Carbide Mosfets Under Short Circuit Conditions

Forbes, J.; Salcedo, F.; Tchoupe-Nono, C.; Bayne, Stephen

doi:10.1109/ppps34859.2019.9009635

Cited by 1 publication

(2 citation statements)

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“…SC capability of a power device is often used to assess SC robustness, such as SC withstand time (SCWT) or SC energy ESC [49]. For ESC of the DUT, it can be computed using:…”

Section: Characterization Of Short-circuit Capabilitymentioning

confidence: 99%

“…Nevertheless, there is no uniform standard for investigating the SC capability of SiC devices so far, as the JEDEC Solid State Technology Association provides testing standards for Si devices. Considering complex failure modes (gate failure and thermal runaway) and the delayed failure phenomenon, which is related to VGS, VDS, case temperature, and SC pulse wide [8], [47], [50], [51], [52], the method with continuously applying SC stress until the test circuit is cut off by the series protection will ignore the delayed failure phenomenon and lead to an overestimation of ESC [39], [49]. According to the reported literature, the common method uses the test sequence in Fig.…”

Section: Characterization Of Short-circuit Capabilitymentioning

confidence: 99%

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Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

Cui

Xin

Liu

et al. 2022

IEEE J. Emerg. Sel. Topics Power Electron.

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To accelerate the broad application of silicon carbide (SiC) power MOSFETs, their short-circuit (SC) robustness and reliability must be thoroughly evaluated. This paper, therefore, presents an overview of related research methods aiming to meet that objective. Topics reviewed include the non-destructive tester (NDT) used to implement SC faults, extraction and analysis of degradation parameters, and failure analysis of SiC MOSFETs. Concerning the NDT, its design criteria and methods for evaluating SC robustness are discussed. After which, key parameters used to assess SC reliability and methods for investigating degradation mechanisms are discussed and summarized. Finally, failure analysis techniques and their contributions to failure mechanisms are reviewed.

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“…SC capability of a power device is often used to assess SC robustness, such as SC withstand time (SCWT) or SC energy ESC [49]. For ESC of the DUT, it can be computed using:…”

Section: Characterization Of Short-circuit Capabilitymentioning

confidence: 99%